Prof Sir Colin Humphreys
Professor of Materials Science
School of Engineering and Materials Science
Queen Mary University of London
+44 (0)20 7882 3450Queen Mary University of London
c.humphreys@qmul.ac.uk
www.sems.qmul.ac.uk/c.humphreys
Publications
Publications of specific relevance to 2022
Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. Oxford University Press (Oup) Microscopy and Microanalysis vol. 28, (S1) 2736-2737. 10.1017/s1431927622010297Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. American Physical Society Physical Review B vol. 105, (16) 10.1103/PhysRevB.105.165416Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). Advanced Optical Materials vol. 10, (3) 2270012-2270012. 10.1002/adom.202270012Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. American Physical Society Physical Review B vol. 105, (2) 10.1103/physrevb.105.024103Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ (2022). The relationship between epitaxial growth, defect microstructure and luminescence in GaN. Electron Microscopy and Analysis 1997 Taylor & Francis 10.1201/9781003063056-1112021
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. Wiley Advanced Optical Materials 2101675-2101675. 10.1002/adom.202101675Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. Royal Society of Chemistry Crystengcomm vol. 23, (35) 6059-6069. 10.1039/d1ce00627dSun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Aip Publishing Applied Physics Reviews 10.1063/5.0040578Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B vol. 103, (11) 119901-119901. 10.1103/physrevb.103.119901Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL (2021). Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100). Microscopy of Semiconducting Materials, 1987 Taylor & Francis 10.1201/9781003069621-272020
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Nature Publishing Group Scientific Reports vol. 10, 10.1038/s41598-020-72372-1Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. American Chemical Society Acs Nano 10.1021/acsnano.9b08553S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. American Vacuum Society Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 38, (3) 10.1116/1.5144509Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. American Physical Society Physical Review B: Condensed Matter and Materials Physics vol. 101, 10.1103/PhysRevB.101.1254212019
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 217, (7) 10.1002/pssa.201900794Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Mdpi Sensors 10.3390/s19204386Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. American Chemical Society (Acs) Acs Applied Energy Materials vol. 2, (10) 6998-7004. 10.1021/acsaem.8b02132Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? American Physical Society Physical Review Letters vol. 123, 135501-135501. 10.1103/PhysRevLett.123.135501Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Aip Publishing Journal of Applied Physics vol. 125, (22) 10.1063/1.5097411Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Aip Publishing Journal of Applied Physics vol. 125, (16) 10.1063/1.5084330Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. Japanese Journal of Applied Physics vol. 58, 10.7567/1347-4065/ab0407Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B vol. 99, (4) 10.1103/PhysRevB.99.0454022018
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 66, (1) 613-618. 10.1109/ted.2018.2882533Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. Aip Publishing Journal of Applied Physics vol. 124, (18) 10.1063/1.5047240Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. American Chemical Society (Acs) Acs Photonics vol. 5, (11) 4437-4446. 10.1021/acsphotonics.8b00904Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. American Physical Society (Aps) Physical Review B vol. 98, (15) 10.1103/physrevb.98.155301Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Mdpi Materials vol. 11, (9) 10.3390/ma11091736Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Aip Publishing Journal of Applied Physics vol. 124, (10) 10.1063/1.5046801Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Aip Publishing Journal of Applied Physics vol. 124, (5) 10.1063/1.5027680Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics vol. 59, (4) Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Oxford University Press (Oup) Microscopy and Microanalysis vol. 24, (S1) 4-5. 10.1017/s143192761800051xCho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Institution of Engineering and Technology (Iet) Electronics Letters vol. 54, (15) 947-949. 10.1049/el.2018.1097Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Aip Publishing Journal of Applied Physics vol. 123, (18) 10.1063/1.5027822Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Aip Publishing Journal of Applied Physics vol. 123, (18) 10.1063/1.5026267Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Iop Publishing Journal of Physics Condensed Matter vol. 30, (17) 10.1088/1361-648x/aab818Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics vol. 59, (1) Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. Oxford University Press (Oup) Astronomy & Geophysics vol. 59, (1) 1.8-1.8. 10.1093/astrogeo/aty021Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Aip Publishing Journal of Applied Physics vol. 123, (2) 10.1063/1.5006255Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003 10.1201/97813510746362017
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Aip Publishing Journal of Applied Physics vol. 122, (23) 10.1063/1.4986434Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 64, (12) 4868-4874. 10.1109/ted.2017.2757516Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Oxford University Press (Oup) Astronomy & Geophysics vol. 58, (5) 5.39-5.42. 10.1093/astrogeo/atx178Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters vol. 44, (18) 9276-9282. 10.1002/2017GL074677Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Iop Publishing Journal of Physics D vol. 50, (43) 10.1088/1361-6463/aa865eHumphreys C (2017). Ahmed Zewail — A Towering Visionary. Personal and Scientific Reminiscences World Scientific Publishing 10.1142/9781786344366_0019Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Aip Publishing Applied Physics Letters vol. 111, (4) 10.1063/1.4996233Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. American Chemical Society (Acs) Nano Letters vol. 17, (8) 4846-4852. 10.1021/acs.nanolett.7b01697Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Aip Publishing Applied Physics Letters vol. 110, (17) 10.1063/1.4982594Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Power Electronics vol. 32, (11) 8743-8750. 10.1109/tpel.2016.2643499Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Elsevier Ultramicroscopy vol. 176, 93-98. 10.1016/j.ultramic.2017.01.019Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Elsevier Journal of Crystal Growth vol. 459, 185-188. 10.1016/j.jcrysgro.2016.12.025Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Aip Publishing Journal of Applied Physics vol. 121, (4) 10.1063/1.4973956Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. American Chemical Society (Acs) Crystal Growth & Design vol. 17, (2) 474-482. 10.1021/acs.cgd.6b01281Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. Aip Publishing Journal of Applied Physics vol. 121, (1) 10.1063/1.4973278Smeeton T and Humphreys C (2017). Perspectives on Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials Springer Nature 10.1007/978-3-319-48933-9_12016
Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Impact of high energy electrons on nitrides for nanocathodoluminescence. European Microscopy Congress 2016: Proceedings Wiley 10.1002/9783527808465.emc2016.6172Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping. European Microscopy Congress 2016: Proceedings Wiley 10.1002/9783527808465.emc2016.6170Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Aip Publishing Applied Physics Letters vol. 109, (23) 10.1063/1.4971366Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Elsevier Journal of Crystal Growth vol. 456, 151-154. 10.1016/j.jcrysgro.2016.07.038Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Elsevier Solid State Communications vol. 247, 68-71. 10.1016/j.ssc.2016.08.017Schulz S, Tanner DSP, O'Reilly EP, Caro MA, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Aip Publishing Applied Physics Letters vol. 109, (22) 10.1063/1.4968591Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater vol. 17, (1) 736-743. 10.1080/14686996.2016.1244474Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Aip Publishing Journal of Applied Physics vol. 120, (16) 10.1063/1.4965989Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Aip Publishing Journal of Applied Physics vol. 120, (8) 10.1063/1.4961417Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. Springer Nature Scientific Reports vol. 6, (1) 10.1038/srep29747Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). Iop Publishing Semiconductor Science and Technology vol. 31, (8) 10.1088/0268-1242/31/8/085007Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. Aip Publishing Aip Advances vol. 6, (7) 10.1063/1.4959100Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Aip Publishing Applied Physics Letters vol. 108, (25) 10.1063/1.4954236Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. Spie, The International Society For Optics and Photonics Spie Newsroom 10.1117/2.1201605.006482Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Aip Publishing Applied Physics Letters vol. 108, (21) 10.1063/1.4948582Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics vol. 119, (18) 10.1063/1.4948237Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. Iop Publishing Semiconductor Science and Technology vol. 31, (6) 10.1088/0268-1242/31/6/065020Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. Aip Publishing Journal of Applied Physics vol. 119, (17) 10.1063/1.4948299Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). Wiley Physica Status Solidi (B) vol. 253, (5) 1024-1024. 10.1002/pssb.201670532Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Springer Nature Scientific Reports vol. 6, (1) 10.1038/srep24862Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C) 10.1002/pssc.201610187Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. Elsevier Journal of Crystal Growth vol. 440, 69-75. 10.1016/j.jcrysgro.2016.01.014Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 63, (5) 1861-1865. 10.1109/ted.2016.2542588Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. American Chemical Society (Acs) Crystal Growth & Design vol. 16, (4) 1907-1916. 10.1021/acs.cgd.5b01438Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Aip Publishing Journal of Applied Physics vol. 119, (10) 10.1063/1.4942847Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Aip Publishing Applied Physics Letters vol. 108, (7) 10.1063/1.4942093Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Aip Publishing Journal of Applied Physics vol. 119, (5) 10.1063/1.4941321Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Elsevier Journal of Crystal Growth vol. 434, 123-127. 10.1016/j.jcrysgro.2015.11.005Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. Royal Society of Chemistry (Rsc) Journal of Materials Chemistry C vol. 4, (35) 8291-8296. 10.1039/c6tc02825jZhu D and Humphreys CJ (2016). Solid-State Lighting Based on Light Emitting Diode Technology. Optics in Our Time Springer Nature 10.1007/978-3-319-31903-2_52015
Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Aip Publishing Applied Physics Letters vol. 107, (24) 10.1063/1.4937457Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2015). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire. Wiley Physica Status Solidi (B) vol. 253, (5) 834-839. 10.1002/pssb.201552636Schulz S, Tanner DP, O'Reilly EP, Caro MA, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2015). Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. American Physical Society (Aps) Physical Review B vol. 92, (23) 10.1103/physrevb.92.235419Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN. American Physical Society (Aps) Physical Review B vol. 92, (24) 10.1103/physrevb.92.245202Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. American Chemical Society (Acs) Nano Letters vol. 15, (11) 7639-7643. 10.1021/acs.nanolett.5b03531Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. Aip Publishing Aip Advances vol. 5, (10) 10.1063/1.4934491Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Aip Publishing Applied Physics Letters vol. 107, (13) 10.1063/1.4932200Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2015). Optimizing GaN () hetero‐epitaxial templates grown on () sapphire. Wiley Physica Status Solidi (B) vol. 253, (1) 61-66. 10.1002/pssb.201552263Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Iop Publishing Semiconductor Science and Technology vol. 30, (10) 10.1088/0268-1242/30/10/105007Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2015). Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers. Wiley Physica Status Solidi (B) vol. 253, (1) 46-53. 10.1002/pssb.201552266Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 62, (8) 2464-2469. 10.1109/ted.2015.2444911Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optica Publishing Group Optics Express vol. 23, (7) 9329-9338. 10.1364/oe.23.009329Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire. Elsevier Journal of Crystal Growth vol. 415, 170-175. 10.1016/j.jcrysgro.2014.12.040Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Aip Publishing Journal of Applied Physics vol. 117, (11) 10.1063/1.4915628Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Iop Publishing Applied Physics Express vol. 8, (3) 10.7567/apex.8.036502Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of In to Dislocations in InGaN. American Chemical Society (Acs) Nano Letters vol. 15, (2) 923-930. 10.1021/nl50365132014
Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Carrier distributions in InGaN/GaN light‐emitting diodes. Wiley Physica Status Solidi (B) vol. 252, (5) 890-894. 10.1002/pssb.201451534Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Aip Publishing Journal of Applied Physics vol. 116, (24) 10.1063/1.4904923Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Wiley Physica Status Solidi (B) vol. 252, (5) 928-935. 10.1002/pssb.201451543Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. Aip Publishing Apl Materials vol. 2, (12) 10.1063/1.4904068Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE. Elsevier Journal of Crystal Growth vol. 408, 32-41. 10.1016/j.jcrysgro.2014.09.009Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. Wiley Physica Status Solidi (B) vol. 252, (5) 866-872. 10.1002/pssb.201451535Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy. Aip Publishing Journal of Applied Physics vol. 116, (15) 10.1063/1.4898569Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD (2014). Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride. American Physical Society (Aps) Physical Review Letters vol. 113, (13) 10.1103/physrevlett.113.135503Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Aip Publishing Applied Physics Letters vol. 105, (11) 10.1063/1.4896279Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Aip Publishing Journal of Applied Physics vol. 116, (10) 10.1063/1.4894688Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Aip Publishing Applied Physics Letters vol. 105, (9) 10.1063/1.4894834Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems. Oxford University Press (Oup) Microscopy and Microanalysis vol. 20, (S3) xcvii-c. 10.1017/s1431927614013154Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Oxford University Press (Oup) Microscopy and Microanalysis vol. 20, (S2) 11-14. 10.1017/s1431927614001123Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Aip Publishing Journal of Applied Physics vol. 116, (3) 10.1063/1.4890497Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Aip Publishing Journal of Applied Physics vol. 116, (1) 10.1063/1.4887139Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. Aip Publishing Aip Advances vol. 4, (6) 10.1063/1.4882176Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Aip Publishing Applied Physics Letters vol. 104, (21) 10.1063/1.4879644Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Aip Publishing Journal of Applied Physics vol. 115, (11) 10.1063/1.4868692Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Aip Publishing Journal of Applied Physics vol. 115, (11) 10.1063/1.4868628Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Iop Publishing Journal of Physics D vol. 47, (13) 10.1088/0022-3727/47/13/135107Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 211, (4) 740-743. 10.1002/pssa.201300485Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. Wiley Physica Status Solidi (C) vol. 11, (3‐4) 750-753. 10.1002/pssc.201300452Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Aip Publishing Journal of Applied Physics vol. 115, (3) 10.1063/1.4862298Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Elsevier Journal of Crystal Growth vol. 386, 88-93. 10.1016/j.jcrysgro.2013.10.0042013
Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Aip Publishing Journal of Applied Physics vol. 114, (24) 10.1063/1.4848036Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial Structure and Chemistry of GaN on Ge(111). American Physical Society (Aps) Physical Review Letters vol. 111, (25) 10.1103/physrevlett.111.256101Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Aip Publishing Applied Physics Letters vol. 103, (25) 10.1063/1.4851875Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2013). Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN. Oxford University Press (Oup) Microscopy and Microanalysis vol. 20, (1) 55-60. 10.1017/s1431927613013755Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Elsevier Journal of Crystal Growth vol. 383, 12-18. 10.1016/j.jcrysgro.2013.07.035Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Aip Publishing Journal of Applied Physics vol. 114, (13) 10.1063/1.4824179Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Iop Publishing Reports On Progress in Physics vol. 76, (10) 10.1088/0034-4885/76/10/106501Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Elsevier Solar Energy Materials and Solar Cells vol. 117, 279-284. 10.1016/j.solmat.2013.06.022Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Aip Publishing Applied Physics Letters vol. 103, (14) 10.1063/1.4824193Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 93, (28-30) 3925-3938. 10.1080/14786435.2013.797617Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps. Iop Publishing Semiconductor Science and Technology vol. 28, (9) 10.1088/0268-1242/28/9/094006Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds. Iop Publishing Japanese Journal of Applied Physics vol. 52, (8S) 10.7567/jjap.52.08jb29Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA (2013). Mg Doping Affects Dislocation Core Structures in GaN. American Physical Society (Aps) Physical Review Letters vol. 111, (2) 10.1103/physrevlett.111.025502Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells. Iop Publishing Japanese Journal of Applied Physics vol. 52, (8S) 10.7567/jjap.52.08jg09Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures. Iop Publishing Japanese Journal of Applied Physics vol. 52, (8S) 10.7567/jjap.52.08jk10Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells. Iop Publishing Japanese Journal of Applied Physics vol. 52, (8S) 10.7567/jjap.52.08jl12Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Iop Publishing Semiconductor Science and Technology vol. 28, (6) 10.1088/0268-1242/28/6/065011Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Aip Publishing Journal of Applied Physics vol. 113, (7) 10.1063/1.4792505Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Aip Publishing Journal of Applied Physics vol. 113, (6) 10.1063/1.4790311Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance. Iop Publishing Applied Physics Express vol. 6, (2) 10.7567/apex.6.022102Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Aip Publishing Applied Physics Letters vol. 102, (2) 10.1063/1.47813982012
Humphreys CJ (2012). The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 69, (1) 45-50. 10.1107/s0108767312047587Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2012). Properties of trench defects in InGaN/GaN quantum well structures. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 210, (1) 195-198. 10.1002/pssa.201200408Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Aip Publishing Applied Physics Letters vol. 101, (21) 10.1063/1.4768291Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Aip Publishing Journal of Applied Physics vol. 112, (1) 10.1063/1.4731730Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Aip Publishing Journal of Applied Physics vol. 111, (8) 10.1063/1.3703062Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 59, (5) 1416-1422. 10.1109/ted.2012.2186970Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Aip Publishing Journal of Applied Physics vol. 111, (5) 10.1063/1.3692569Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire. Wiley Physica Status Solidi (B) vol. 249, (3) 494-497. 10.1002/pssb.201100479Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Aip Publishing Journal of Applied Physics vol. 111, (4) 10.1063/1.3678631Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope. Wiley Physica Status Solidi (C) vol. 9, (3‐4) 1079-1082. 10.1002/pssc.201100165Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Aip Publishing Applied Physics Letters vol. 100, (1) 10.1063/1.3674984Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Elsevier Thin Solid Films vol. 520, (7) 3064-3070. 10.1016/j.tsf.2011.11.0202011
Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2011). Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN. Wiley Physica Status Solidi (B) vol. 249, (3) 498-502. 10.1002/pssb.201100480Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Elsevier Journal of Crystal Growth vol. 337, (1) 81-86. 10.1016/j.jcrysgro.2011.10.004Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2011). Growth, microstructure and morphology of epitaxial ScGaN films. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 209, (1) 33-40. 10.1002/pssa.201100158Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ (2011). High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 209, (1) 13-16. 10.1002/pssa.201100129Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Aip Publishing Journal of Applied Physics vol. 110, (9) 10.1063/1.3656431Zhang Y, Fu W-Y, Humphreys C and Lieten R (2011). Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate. Iop Publishing Applied Physics Express vol. 4, (9) 10.1143/apex.4.091001Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates. Iop Publishing Japanese Journal of Applied Physics vol. 50, (8R) 10.1143/jjap.50.080201Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates. Iop Publishing Japanese Journal of Applied Physics vol. 50, (8R) 10.7567/jjap.50.080201Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells. Aip Publishing Applied Physics Letters vol. 99, (2) 10.1063/1.3610468Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation Climb in c-Plane AlN Films. Iop Publishing Applied Physics Express vol. 4, (6) 10.1143/apex.4.065503Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 208, (7) 1529-1531. 10.1002/pssa.201001007Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. American Physical Society (Aps) Physical Review B vol. 83, (16) 10.1103/physrevb.83.165122Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Aip Publishing Journal of Applied Physics vol. 109, (7) 10.1063/1.3553841Humphreys CJ (2011). The Mystery of the Last Supper. Cambridge University Press (Cup) 10.1017/cbo9780511973871Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. American Physical Society (Aps) Physical Review B vol. 83, (11) 10.1103/physrevb.83.115321Zhu D and Humphreys CJ (2011). Lighting. Fundamentals of Materials For Energy and Environmental Sustainability Cambridge University Press (Cup) 10.1017/cbo9780511718786.041Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Aip Publishing Journal of Applied Physics vol. 109, (1) 10.1063/1.3524186Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Aip Publishing Journal of Applied Physics vol. 109, (1) 10.1063/1.35306022010
Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Aip Publishing Applied Physics Letters vol. 97, (26) 10.1063/1.3532965Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Aip Publishing Applied Physics Letters vol. 97, (25) 10.1063/1.3527928Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Aip Publishing Journal of Applied Physics vol. 108, (12) 10.1063/1.3525622Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Elsevier Ultramicroscopy vol. 111, (3) 207-211. 10.1016/j.ultramic.2010.11.028Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Elsevier Journal of Crystal Growth vol. 312, (23) 3536-3543. 10.1016/j.jcrysgro.2010.08.041Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. American Physical Society (Aps) Physical Review B vol. 82, (12) 10.1103/physrevb.82.125318Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Iop Publishing Journal of Physics D vol. 43, (35) 10.1088/0022-3727/43/35/354003Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Electron Devices vol. 57, (10) 2455-2461. 10.1109/ted.2010.2056291Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Aip Publishing Journal of Applied Physics vol. 108, (3) 10.1063/1.3460641Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A (2010). Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices. Oxford University Press (Oup) Microscopy and Microanalysis vol. 16, (S2) 1890-1891. 10.1017/s1431927610059854Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Aip Publishing Review of Scientific Instruments vol. 81, (6) 10.1063/1.3430539Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 66, (4) 446-450. 10.1107/s0108767310008664Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Elsevier Journal of Crystal Growth vol. 312, (4) 595-600. 10.1016/j.jcrysgro.2009.11.043Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Iop Publishing Journal of Physics D vol. 43, (5) 10.1088/0022-3727/43/5/055303Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Elsevier Journal of Crystal Growth vol. 312, (3) 363-367. 10.1016/j.jcrysgro.2009.11.0142009
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2009). Cavity Enhancement of Single Quantum Dot Emission in the Blue. Springer Nature Discover Nano vol. 5, (3) 10.1007/s11671-009-9514-4Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. Aip Publishing Journal of Applied Physics vol. 106, (11) 10.1063/1.3268466Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Aip Publishing Journal of Applied Physics vol. 106, (10) 10.1063/1.3259379Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The Spatial Distribution of Threading Dislocations in Gallium Nitride Films. Wiley Advanced Materials vol. 21, (38‐39) 3941-3944. 10.1002/adma.200901095Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Aip Publishing Applied Physics Letters vol. 95, (15) 10.1063/1.3244203Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Aip Publishing Journal of Applied Physics vol. 106, (7) 10.1063/1.3225920Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Aip Publishing Journal of Applied Physics vol. 106, (5) 10.1063/1.3212971Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Elsevier Physica B Condensed Matter vol. 404, (16) 2189-2191. 10.1016/j.physb.2009.04.010Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Aip Publishing Journal of Applied Physics vol. 106, (1) 10.1063/1.3160312Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Iop Publishing Journal of Physics D vol. 42, (13) 10.1088/0022-3727/42/13/135407Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Aip Publishing Journal of Applied Physics vol. 105, (12) 10.1063/1.3156688Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED–HOLZ technique. Elsevier Ultramicroscopy vol. 109, (10) 1250-1255. 10.1016/j.ultramic.2009.05.018Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Elsevier Journal of Crystal Growth vol. 311, (12) 3239-3242. 10.1016/j.jcrysgro.2009.03.029Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Elsevier Journal of Crystal Growth vol. 311, (12) 3295-3299. 10.1016/j.jcrysgro.2009.03.044Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Aip Publishing Journal of Applied Physics vol. 105, (11) 10.1063/1.3129307Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Iop Publishing Nanotechnology vol. 20, (24) 10.1088/0957-4484/20/24/245702Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Aip Publishing Applied Physics Letters vol. 94, (16) 10.1063/1.3119321Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Aip Publishing Journal of Applied Physics vol. 105, (7) 10.1063/1.3103305Holec D, Rao DVS and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Elsevier Ultramicroscopy vol. 109, (7) 837-844. 10.1016/j.ultramic.2009.03.026Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Elsevier Journal of Crystal Growth vol. 311, (7) 2054-2057. 10.1016/j.jcrysgro.2008.11.084Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Aip Publishing Applied Physics Letters vol. 94, (1) 10.1063/1.30566532008
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Aip Publishing Journal of Applied Physics vol. 104, (12) 10.1063/1.3033553Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Aip Publishing Applied Physics Letters vol. 93, (23) 10.1063/1.3044395Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Elsevier Thin Solid Films vol. 516, (23) 8569-8572. 10.1016/j.tsf.2008.05.050Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Aip Publishing Applied Physics Letters vol. 93, (10) 10.1063/1.2971205Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose. Elsevier Journal of Crystal Growth vol. 310, (15) 3459-3465. 10.1016/j.jcrysgro.2008.05.001Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures. Aip Publishing Journal of Applied Physics vol. 104, (1) 10.1063/1.2938081Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Sage Publications Materials Science and Technology vol. 24, (6) 675-681. 10.1179/174328408x270301Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Aip Publishing Journal of Applied Physics vol. 103, (9) 10.1063/1.2913514Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Elsevier Journal of Crystal Growth vol. 310, (11) 2746-2750. 10.1016/j.jcrysgro.2008.01.045Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Aip Publishing Applied Physics Letters vol. 92, (15) 10.1063/1.2908919Humphreys CJ (2008). Solid-State Lighting. Springer Nature Mrs Bulletin vol. 33, (4) 459-470. 10.1557/mrs2008.91Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a-plane GaN crystal quality by a two-step growth process. Aip Publishing Applied Physics Letters vol. 92, (10) 10.1063/1.2830023Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride. American Vacuum Society Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 26, (2) 611-617. 10.1116/1.2890705de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008). Wiley Advanced Materials vol. 20, (5) 10.1002/adma.200890016de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures. Wiley Advanced Materials vol. 20, (5) 1038-1043. 10.1002/adma.200701739Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Aip Publishing Applied Physics Letters vol. 92, (4) 10.1063/1.2829592Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Aip Publishing Journal of Applied Physics vol. 103, (2) 10.1063/1.2829781Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3. Elsevier Applied Surface Science vol. 254, (7) 2124-2130. 10.1016/j.apsusc.2007.08.075Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM, Dawson P, Cerezo A and Clifton PH (2008). The atomic structure of GaN-based quantum wells and interfaces. Emc 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany Springer Nature 10.1007/978-3-540-85226-1_212007
Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Elsevier Materials Today vol. 10, (12) 36-42. 10.1016/s1369-7021(07)70306-1Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Elsevier Physica B Condensed Matter vol. 401, 311-314. 10.1016/j.physb.2007.08.175Humphreys CJ (2007). Chapter 42. Turning Points in Solid-State, Materials and Surface Science Royal Society of Chemistry (Rsc) 10.1039/9781847558183-00698Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot. American Physical Society (Aps) Physical Review Letters vol. 99, (19) 10.1103/physrevlett.99.197403Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure. American Physical Society (Aps) Physical Review B vol. 76, (20) 10.1103/physrevb.76.205403Jiang N, Qiu J, Humphreys CJ and Spence JCH (2007). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Elsevier Micron vol. 39, (6) 698-702. 10.1016/j.micron.2007.10.014Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2007). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Elsevier Micron vol. 39, (6) 690-697. 10.1016/j.micron.2007.10.013Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]. Aip Publishing Applied Physics Letters vol. 91, (17) 10.1063/1.2783977Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Aip Publishing Applied Physics Letters vol. 91, (15) 10.1063/1.2794009Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Elsevier Journal of Crystal Growth vol. 308, (2) 302-308. 10.1016/j.jcrysgro.2007.09.009Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Aip Publishing Applied Physics Letters vol. 91, (9) 10.1063/1.2779099Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y (2007). 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials. Oxford University Press (Oup) Microscopy and Microanalysis vol. 13, (S02) 1608-1609. 10.1017/s1431927607071279Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Aip Publishing Applied Physics Letters vol. 91, (5) 10.1063/1.2767217Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction. Aip Publishing Journal of Applied Physics vol. 102, (2) 10.1063/1.2749484van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Aip Publishing Journal of Applied Physics vol. 102, (1) 10.1063/1.2751401Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 87, (13) 1971-1982. 10.1080/14786430701342172Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor vol. 13, (4) 27-30. van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Aip Publishing Applied Physics Letters vol. 90, (12) 10.1063/1.2715166Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Aip Publishing Journal of Applied Physics vol. 101, (6) 10.1063/1.2713937Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering. Aip Publishing Applied Physics Letters vol. 90, (6) 10.1063/1.2431573Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Elsevier Applied Surface Science vol. 253, (8) 3937-3944. 10.1016/j.apsusc.2006.08.028Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm. Aip Publishing Journal of Applied Physics vol. 101, (3) 10.1063/1.2434823Chee AKW, Rodenburg C and Humphreys CJ (2007). The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions. Springer Nature Mrs Advances vol. 1026, 10.1557/proc-1026-c04-022006
Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Aip Publishing Journal of Applied Physics vol. 100, (11) 10.1063/1.2369652Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. Aip Publishing Applied Physics Letters vol. 89, (21) 10.1063/1.2392820Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Elsevier Ultramicroscopy vol. 107, (4-5) 382-389. 10.1016/j.ultramic.2006.10.002Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 86, (29-31) 4781-4796. 10.1080/14786430600776322Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Elsevier Applied Surface Science vol. 252, (24) 8385-8387. 10.1016/j.apsusc.2005.11.069Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Aip Publishing Journal of Applied Physics vol. 100, (5) 10.1063/1.2335980Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Elsevier Ultramicroscopy vol. 107, (2-3) 140-150. 10.1016/j.ultramic.2006.06.003Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Aip Publishing Journal of Applied Physics vol. 100, (2) 10.1063/1.2217106Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. Aip Publishing Applied Physics Letters vol. 89, (1) 10.1063/1.2219747Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 86, (16) 2315-2327. 10.1080/14786430500522628Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Aip Publishing Applied Physics Letters vol. 88, (21) 10.1063/1.2207552Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 203, (7) 1819-1823. 10.1002/pssa.200565250Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Elsevier Physica E Low-Dimensional Systems and Nanostructures vol. 32, (1-2) 119-122. 10.1016/j.physe.2005.12.022Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Elsevier Journal of Crystal Growth vol. 289, (2) 506-514. 10.1016/j.jcrysgro.2005.12.075Smeeton T and Humphreys C (2006). Perspectives on Electronic and Optoelectronic Materials. Springer Handbook of Electronic and Photonic Materials Springer Nature 10.1007/978-0-387-29185-7_1Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. Springer Nature Mrs Advances vol. 955, 10.1557/proc-0955-i04-072005
Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Aip Publishing Journal of Applied Physics vol. 98, (5) 10.1063/1.2033144Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Aip Publishing Applied Physics Letters vol. 86, (21) 10.1063/1.1935044Humphreys C (2005). Science and the Miracles of Exodus. Edp Sciences Europhysics News vol. 36, (3) 93-96. 10.1051/epn:2005306Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. Aip Publishing Journal of Applied Physics vol. 97, (10) 10.1063/1.1897070Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Elsevier Acta Materialia vol. 53, (1) 97-110. 10.1016/j.actamat.2004.09.007van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. Springer Nature Mrs Advances vol. 892, (1) 10.1557/proc-0892-ff32-03Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. Springer Nature Mrs Advances vol. 892, (1) 10.1557/proc-0892-ff28-07Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. Springer Nature Mrs Advances vol. 892, (1) 10.1557/proc-0892-ff27-12Costa PM, Datta R, Kappers MJ, Vickers ME and Humphreys CJ (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. Springer Nature Mrs Advances vol. 892, 10.1557/proc-0892-ff25-01Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. Springer Nature Mrs Advances vol. 892, (1) 10.1557/proc-0892-ff24-06Wong ASW, Ho GW, Dunin-Borkowski RE, Kasama T, Oliver RA, Costa PM and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. Springer Nature Mrs Advances vol. 892, 10.1557/proc-0892-ff11-022004
Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. Aip Publishing Journal of Applied Physics vol. 97, (1) 10.1063/1.1823581Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. Aip Publishing Applied Physics Letters vol. 85, (22) 5200-5202. 10.1063/1.1829139Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Aip Publishing Applied Physics Letters vol. 85, (16) 3411-3413. 10.1063/1.1807962Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. Institute of Electrical and Electronics Engineers (Ieee) Ieee Transactions On Nanotechnology vol. 3, (3) 343-347. 10.1109/tnano.2004.828567Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Aip Publishing Applied Physics Letters vol. 84, (20) 4110-4112. 10.1063/1.1753653Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? Springer Nature Mrs Bulletin vol. 29, (4) 222-223. 10.1557/mrs2004.65Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Sage Publications Materials Science and Technology vol. 20, (4) 533-538. 10.1179/026708304225012008Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Aip Publishing Applied Physics Letters vol. 84, (12) 2109-2111. 10.1063/1.1689755Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Royal Society of Chemistry (Rsc) Lab On a Chip vol. 4, (3) 225-229. 10.1039/b312592kChen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering. The Electrochemical Society Electrochemical and Solid-State Letters vol. 7, (8) a235-a238. 10.1149/1.1758931Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. Springer Nature Mrs Advances vol. 831, 10.1557/proc-831-e8.8Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). Springer Nature Mrs Advances vol. 831, (1) 377-381. 10.1557/proc-831-e3.172003
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Aip Publishing Applied Physics Letters vol. 83, (26) 5419-5421. 10.1063/1.1636534Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Aip Publishing Applied Physics Letters vol. 83, (17) 3626-3627. 10.1063/1.1622987Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Aip Publishing Applied Physics Letters vol. 83, (13) 2674-2676. 10.1063/1.1614831Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Elsevier Journal of Crystal Growth vol. 256, (3-4) 237-242. 10.1016/s0022-0248(03)01359-9Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Aip Publishing Journal of Applied Physics vol. 94, (3) 1565-1574. 10.1063/1.1587251Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Aip Publishing Applied Physics Letters vol. 83, (4) 755-757. 10.1063/1.1595716Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Aip Publishing Applied Physics Letters vol. 83, (2) 293-295. 10.1063/1.1592302Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Aip Publishing Journal of Applied Physics vol. 93, (11) 9095-9103. 10.1063/1.1571220Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Aip Publishing Applied Physics Letters vol. 82, (17) 2755-2757. 10.1063/1.15705152002
Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Aip Publishing Journal of Applied Physics vol. 92, (12) 7667-7671. 10.1063/1.1525862Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]. Aip Publishing Applied Physics Letters vol. 81, (16) 3102-3103. 10.1063/1.1515887Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. American Physical Society (Aps) Physical Review B vol. 66, (12) 10.1103/physrevb.66.125319Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope—A study of Si. Aip Publishing Journal of Applied Physics vol. 91, (11) 9116-9122. 10.1063/1.1476968Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. American Vacuum Society Journal of Vacuum Science & Technology a Vacuum Surfaces and Films vol. 20, (3) 986-990. 10.1116/1.1464842Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Aip Publishing Journal of Applied Physics vol. 91, (1) 367-374. 10.1063/1.1419210Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. Materials World vol. 10, (1) 11-11. Humphreys CJ (2002). Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction. Scattering Elsevier 10.1016/b978-012613760-6/50069-32001
Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy. Oxford University Press (Oup) Microscopy vol. 50, (6) 489-495. 10.1093/jmicro/50.6.489Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. Taylor & Francis Philosophical Magazine B vol. 81, (11) 1725-1744. 10.1080/13642810110079962Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Aip Publishing Applied Physics Letters vol. 79, (16) 2594-2596. 10.1063/1.1410362Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Elsevier Journal of Crystal Growth vol. 231, (4) 466-473. 10.1016/s0022-0248(01)01522-6Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. Elsevier Journal of Crystal Growth vol. 230, (3-4) 573-578. 10.1016/s0022-0248(01)01303-3Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. Elsevier Journal of Crystal Growth vol. 230, (3-4) 438-441. 10.1016/s0022-0248(01)01252-0Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN–sapphire interface. Aip Publishing Applied Physics Letters vol. 79, (8) 1121-1123. 10.1063/1.1395525Keast VJ, Sharma N, Kappers M and Humphreys CJ (2001). Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells. Oxford University Press (Oup) Microscopy and Microanalysis vol. 7, (S2) 1182-1183. 10.1017/s1431927600031986Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Aip Publishing Journal of Applied Physics vol. 90, (2) 947-952. 10.1063/1.1379780Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. American Physical Society (Aps) Physical Review B vol. 63, (20) 10.1103/physrevb.63.205117Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Elsevier Materials Science and Engineering B vol. 81, (1-3) 19-22. 10.1016/s0921-5107(00)00677-2Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Aip Publishing Journal of Applied Physics vol. 89, (6) 3143-3150. 10.1063/1.1347003Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Springer Nature Journal of Electronic Materials vol. 30, (3) l13-l16. 10.1007/s11664-001-0030-2Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. Elsevier Thin Solid Films vol. 381, (2) 231-235. 10.1016/s0040-6090(00)01749-1Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. Springer Nature Mrs Advances vol. 667, 10.1557/proc-667-g6.72000
Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. American Vacuum Society Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 18, (6) 2737-2744. 10.1116/1.1323970Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure. Elsevier Intermetallics vol. 8, (9-11) 1209-1214. 10.1016/s0966-9795(00)00043-1Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Aip Publishing Applied Physics Letters vol. 77, (9) 1274-1276. 10.1063/1.1289904Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy. Elsevier Intermetallics vol. 8, (8) 903-913. 10.1016/s0966-9795(00)00029-7Pankhurst DA, Botton GA and Humphreys CJ (2000). The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl. Oxford University Press (Oup) Microscopy and Microanalysis vol. 6, (S2) 186-187. 10.1017/s1431927600033420Humphreys C (2000). Facing up to the future of materials science and technology. Materials World vol. 8, (4) 11-13. Humphreys C (2000). Oxbridge and the public schools. Materials World vol. 8, (1) 2-3. Humphreys C (2000). THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL. Brill Academic Publishers Vetus Testamentum vol. 50, (3) 323-328. 10.1163/1568533005063961999
Humphreys CJ (1999). Electrons seen in orbit. Springer Nature Nature vol. 401, (6748) 21-22. 10.1038/43323Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. Aip Publishing Journal of Applied Physics vol. 86, (5) 2499-2504. 10.1063/1.371083Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Springer Nature Journal of Materials Research vol. 14, (8) 3226-3236. 10.1557/jmr.1999.0436Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Elsevier Journal of Crystal Growth vol. 204, (4) 419-428. 10.1016/s0022-0248(99)00217-1Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Springer Nature Journal of Materials Research vol. 14, (5) 2036-2042. 10.1557/jmr.1999.0275LIU , PRESTON , BOOTHROYD and HUMPHREYS (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images. Wiley Journal of Microscopy vol. 194, (1) 171-182. 10.1046/j.1365-2818.1999.00458.xLIU , BOOTHROYD and HUMPHREYS (1999). Energy‐filtered transmission electron microscopy of multilayers in semiconductors. Wiley Journal of Microscopy vol. 194, (1) 58-70. 10.1046/j.1365-2818.1999.00459.xHumphreys CJ (1999). A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 55, (2‐1) 228-233. 10.1107/s0108767398014093Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-TWalther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy. Elsevier Journal of Crystal Growth vol. 197, (1-2) 113-128. 10.1016/s0022-0248(98)00930-0Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ (1999). Structure and Climb of Faulted Dipoles in GaAs. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 171, (1) 53-57. 10.1002/(sici)1521-396x(199901)171:1<53::aid-pssa53>3.0.co;2-iSmith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon. The Electrochemical Society Journal of The Electrochemical Society vol. 146, (1) 306-312. 10.1149/1.1391605Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Aip Publishing Journal of Applied Physics vol. 85, (1) 148-152. 10.1063/1.3694611998
Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs. American Physical Society (Aps) Physical Review Letters vol. 81, (24) 5350-5353. 10.1103/physrevlett.81.5350Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux. Iop Publishing Japanese Journal of Applied Physics vol. 37, (12R) 10.1143/jjap.37.6556Humphreys C (1998). Stuff of dreams. New Scientist vol. 157, (2126) 44-45. Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (YYonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. Elsevier Materials Science and Engineering A vol. 253, (1-2) 148-150. 10.1016/s0921-5093(98)00723-0Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 78, (2) 491-506. 10.1080/01418619808241915Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys. Taylor & Francis Philosophical Magazine Letters vol. 78, (2) 97-103. 10.1080/095008398178075Humphreys C (1998). Shaping the future of materials science. Materials World vol. 6, (6) 352-355. Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Aip Publishing Journal of Applied Physics vol. 83, (10) 5504-5508. 10.1063/1.367410Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. American Physical Society (Aps) Physical Review B vol. 57, (3) 1505-1509. 10.1103/physrevb.57.1505Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1998). Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory. Springer Nature Mrs Advances vol. 552, 10.1557/proc-552-kk10.1.1Pekarskaya E, Humphreys CJ and Jones CN (1998). Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions. Springer Nature Mrs Advances vol. 552, 10.1557/proc-552-kk5.18.1Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of YMatsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers vol. 37, (12A) 6556-6561. 10.1143/JJAP.37.6556Humphreys C (1998). The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI. Brill Academic Publishers Vetus Testamentum vol. 48, (2) 196-213. 10.1163/15685339827215501997
Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. American Vacuum Society Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 15, (6) 1954-1960. 10.1116/1.589584Humphreys C (1997). Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0. Cambridge University Press (Cup) European Review vol. 5, (4) 443-445. 10.1002/(sici)1234-981x(199710)5:4<443::aid-euro204>3.0.co;2-1Walther T, Humphreys CJ and Cullis AG (1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. Aip Publishing Applied Physics Letters vol. 71, (6) 809-811. 10.1063/1.119653Botton GA and Humphreys CJ (1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. Elsevier Micron vol. 28, (4) 313-319. 10.1016/s0968-4328(97)00018-8Xin Y, Wallis D, Browning ND, Sivananthan S, Pennycook SJ and Humphreys CJ (1997). Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM. Oxford University Press (Oup) Microscopy and Microanalysis vol. 3, (S2) 461-462. 10.1017/s1431927600009193Liu CP, Dunin-Borkowski RE, Boothroyd CB, Brown PD and Humphreys CJ (1997). Characterization of Ultrathin Doping Layers in Semiconductors. Oxford University Press (Oup) Microscopy and Microanalysis vol. 3, (4) 352-363. 10.1017/s1431927697970276Botton GA, Burnell G, Humphreys CJ, Yadav T and Withers JC (1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. Elsevier Journal of Physics and Chemistry of Solids vol. 58, (7) 1091-1102. 10.1016/s0022-3697(97)00233-3Wiezorek JMK, Humphreys CJ and Fraser HL (1997). Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al. Taylor & Francis Philosophical Magazine Letters vol. 75, (5) 281-290. 10.1080/095008397179534Xin Y, Brown PD, Humphreys CJ, Cheng TS and Foxon CT (1997). Domain boundaries in epitaxial wurtzite GaN. Aip Publishing Applied Physics Letters vol. 70, (10) 1308-1310. 10.1063/1.118520Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS and Foxon CT (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Elsevier Journal of Crystal Growth vol. 171, (3-4) 321-332. 10.1016/s0022-0248(96)00663-x1996
Brown PD and Humphreys CJ (1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructure. Aip Publishing Journal of Applied Physics vol. 80, (4) 2527-2529. 10.1063/1.363038Harrowell RV (1996). Missed opportunities for high-temperature superconductivity. Iop Publishing Physics World vol. 9, (8) 15-15. 10.1088/2058-7058/9/8/14Botton GA, Guo GY, Temmerman WM and Humphreys CJ (1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. American Physical Society (Aps) Physical Review B vol. 54, (3) 1682-1691. 10.1103/physrevb.54.1682Chen GS, Boothroyd CB and Humphreys CJ (1996). Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists. Aip Publishing Applied Physics Letters vol. 69, (2) 170-172. 10.1063/1.117361Moodie AF, Etheridge J and Humphreys CJ (1996). The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric Crystals. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 52, (4) 596-605. 10.1107/s0108767396001171Inkson BJ and Humphreys CJ (1996). High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 73, (6) 1647-1661. 10.1080/01418619608243004Inkson BJ and Humphreys CJ (1996). Dislocations at 120° order interfaces in TiAl. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 73, (5) 1333-1345. 10.1080/01418619608245136Loginov YY, Brown PD and Humphreys CJ (1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. Physics of The Solid State vol. 38, (4) 692-697. Loginov YY, Brown PD and Humphreys CJ (1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. Physics of The Solid State vol. 38, (2) 272-277. Chen Q, Knowles KM, Humphreys CJ and Wu XF (1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. Springer Nature Journal of Materials Science vol. 31, (16) 4227-4231. 10.1007/bf00356443Loginov YY, Brown PD and Humphreys CJ (1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. Inorganic Materials vol. 32, (1) 22-25. Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ, Andranov AV, Lacklison DE, Orton JW and Halliwell M (1996). Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method. Springer Nature Mrs Internet Journal of Nitride Semiconductor Research vol. 1, (1) 10.1557/s10925783000020401995
Wiezorek JMK, Court SA and Humphreys CJ (1995). On the dissociation of prism plane superdislocations in Ti3Al. Taylor & Francis Philosophical Magazine Letters vol. 72, (6) 393-403. 10.1080/09500839508242479Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T, Fujiyasu H and Nakanishi Y (1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. Elsevier Journal of Crystal Growth vol. 156, (3) 155-162. 10.1016/0022-0248(95)00276-6Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1995). A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy. Trans Tech Publications 10.4028/www.scientific.net/msf.196-201.505Walther T, Humphreys CJ, Grimshaw MP and Churchill AC (1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 72, (4) 1015-1030. 10.1080/01418619508239950Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR and Humphreys CJ (1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. Elsevier Ultramicroscopy vol. 60, (2) 311-323. 10.1016/0304-3991(95)00058-1Wiezorek JMK and Humphreys CJ (1995). On the hierarchy of planar fault energies in TiAl. Elsevier Scripta Metallurgica Et Materialia vol. 33, (3) 451-458. 10.1016/0956-716x(95)00212-eBrown PD, Loginov YY, Stobbs WM and Humphreys CJ (1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 72, (1) 39-57. 10.1080/01418619508239581Xin Y, Zhou W and Humphreys CJ (1995). HREM studies of the (001) surface of YBa2Cu4O8. Elsevier Physica C Superconductivity vol. 249, (3-4) 319-332. 10.1016/0921-4534(95)00327-4Inkson BJ and Humphreys CJ (1995). High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAl. Taylor & Francis Philosophical Magazine Letters vol. 71, (6) 307-312. 10.1080/09500839508241012Inkson BJ, Boothroyd CB and Humphreys CJ (1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. Elsevier Acta Metallurgica Et Materialia vol. 43, (4) 1429-1438. 10.1016/0956-7151(94)00345-iBrown PD and Humphreys CJ (1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. Sage Publications Materials Science and Technology vol. 11, (1) 54-65. 10.1179/mst.1995.11.1.54CAMPBELL J and HUMPHREYS C (1995). A FRAMEWORK FOR THE FUTURE. Materials World vol. 3, (6) 286-287. 1994
WHITE RS and HUMPHREYS CJ (1994). Famines and cataclysmic volcanism. Wiley Geology Today vol. 10, (5) 181-185. 10.1111/j.1365-2451.1994.tb00421.xBurgess WG, Preston AR, Botton GA, Zaluzec NJ and Humphreys CJ (1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. Elsevier Ultramicroscopy vol. 55, (3) 276-283. 10.1016/0304-3991(94)90062-0Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW and Humphreys CJ (1994). Transmission electron microscopy investigations of II–VI/GaAs heterostructures. Elsevier Journal of Crystal Growth vol. 138, (1-4) 538-544. 10.1016/0022-0248(94)90865-6Wiezorek JMK, Preston AR, Court SA, Fraser HL and Humphreys CJ (1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 69, (2) 285-299. 10.1080/014186194082443441993
White RS and Humphreys C (1993). Evolution and religion. Springer Nature Nature vol. 366, (6453) 296-296. 10.1038/366296c0Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium. Elsevier Acta Metallurgica Et Materialia vol. 41, (10) 2867-2876. 10.1016/0956-7151(93)90101-wChen GS, Boothroyd CB and Humphreys CJ (1993). Novel fabrication method for nanometer-scale silicon dots and wires. Aip Publishing Applied Physics Letters vol. 62, (16) 1949-1951. 10.1063/1.1095001992
Humphreys CJ and Waddington WG (1992). The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion. Tyndale House Tyndale Bulletin vol. 43, (2) 10.53751/001c.30487MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S and HUMPHREYS C (1992). ULTIMATE LIMITS OF LITHOGRAPHY. Physics World vol. 5, (11) 28-32. 1991
HUMPHREYS C (1991). State of British science. Springer Nature Nature vol. 351, (6327) 513-513. 10.1038/351513a0Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP and Salisbury IG (1991). The origin of dislocations in multilayers. Edp Sciences Journal De Physique III vol. 1, (6) 1119-1130. 10.1051/jp3:1991175HUMPHREYS CJ (1991). THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST. Quarterly Journal of The Royal Astronomical Society vol. 32, (4) 389-407. Humphreys C (1991). 100 keV electron beam damage of metals and oxides. Elsevier Micron vol. 22, (1-2) 147-148. 10.1016/0739-6260(91)90133-kHumphreys CJ (1991). Ceramic Superconductors. Concise Encyclopedia of Advanced Ceramic Materials Elsevier 10.1016/b978-0-08-034720-2.50028-91990
HUMPHREYS C and WADDINGTON WG (1990). Crucifixion date. Springer Nature Nature vol. 348, (6303) 684-684. 10.1038/348684a0Kvam EP, Maher DM and Humphreys CJ (1990). Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si. Springer Nature Journal of Materials Research vol. 5, (9) 1900-1907. 10.1557/jmr.1990.1900Humphreys CJ, Bullough TJ, Devenish RW, Maher DM and Turner PS (1990). The interaction of electron beams with solids - Some new effects. Cambridge University Press (Cup) Microscopy and Microanalysis vol. 48, (4) 788-789. 10.1017/s0424820100177076Turner PS, Bullough TJ, Devenish RW, Maher DM and Humphreys CJ (1990). Nanometre hole formation in MgO using electron beams. Taylor & Francis Philosophical Magazine Letters vol. 61, (4) 181-193. 10.1080/09500839008202357Zhang JG, McCartney DG and Humphreys CJ (1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors. Iop Publishing Superconductor Science and Technology vol. 3, (4) 10.1088/0953-2048/3/4/0061989
Humphreys CJ (1989). Book Review: Transmission Electron Microscopy. By L. Reimer. Wiley Angewandte Chemie International Edition vol. 28, (12) 1763-1764. 10.1002/anie.198917631Humphreys CJ (1989). Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0. Wiley Angewandte Chemie vol. 101, (12) 1803-1804. 10.1002/ange.19891011265Humphreys C (1989). Controlling crystal growth. Springer Nature Nature vol. 341, (6244) 689-689. 10.1038/341689a0Humphreys C (1989). Materials Science and Engineering in Britain. Wiley Angewandte Chemie International Edition vol. 28, (8) 1077-1078. 10.1002/anie.198910771Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 59, (5) 1059-1073. 10.1080/01418618908209837Devenish RW, Eaglesham DJ, Maher DM and Humphreys CJ (1989). Nanolithography using field emission and conventional thermionic electron sources. Elsevier Ultramicroscopy vol. 28, (1-4) 324-329. 10.1016/0304-3991(89)90318-5Humphreys CJ (1989). Radiation effects. Elsevier Ultramicroscopy vol. 28, (1-4) 357-358. 10.1016/0304-3991(89)90325-2Fraser HL, Maher DM, Knoell RV, Eaglesham DJ, Humphreys CJ and Bean JC (1989). Compositional modulations in Ge x Si1− x heteroepitaxial layers. American Vacuum Society Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena vol. 7, (2) 210-213. 10.1116/1.584718Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ and Bean JC (1989). Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layers. Aip Publishing Applied Physics Letters vol. 54, (3) 222-224. 10.1063/1.101015Eaglesham DJ, Maher DM, Kvam EP, Bean JC and Humphreys CJ (1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. American Physical Society (Aps) Physical Review Letters vol. 62, (2) 187-190. 10.1103/physrevlett.62.187Humphreys C (1989). Materials science and engineering in Britain. Wiley Advanced Materials vol. 1, (8‐9) 249-250. 10.1002/adma.19890010802Kvam EP, Maher DM and Humphreys CJ (1989). Dislocation Behaviour in GexSi1-x Epilayers on (001)Si. Springer Nature Mrs Advances vol. 160, 10.1557/proc-160-71Bullough TJ, Humphreys CJ and Devenish RW (1989). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgO. Springer Nature Mrs Advances vol. 157, 10.1557/proc-157-323Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL and Salisbury I (1989). Strains and Misfit Dislocations at Interfaces. Evaluation of Advanced Semiconductor Materials by Electron Microscopy Springer Nature 10.1007/978-1-4613-0527-9_151988
Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1988). High temperature superconducting ceramics. Elsevier Materials Science and Engineering B vol. 1, (3-4) 229-235. 10.1016/0921-5107(88)90003-7Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK and Bean JC (1988). X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100). Aip Publishing Applied Physics Letters vol. 53, (21) 2083-2085. 10.1063/1.100288Humphreys CJ, Maher DM, Fraser HL and Eaglesham DJ (1988). Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 58, (5) 787-798. 10.1080/01418618808209953BRAUNSTEIN P, DEVENISH R, GALLEZOT P, HEATON BT, HUMPHREYS CJ, KERVENNAL J, MULLEY S and RIES M (1988). ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity. Wiley Cheminform vol. 19, (42) no-no. 10.1002/chin.198842090Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ and Godfrey DJ (1988). Plasma Anodisation of Silicon for Advanced VLSI. Edp Sciences Journal De Physique Archives vol. 49, (C4) 10.1051/jphyscol:1988482Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. Wiley Angewandte Chemie International Edition vol. 27, (7) 927-929. 10.1002/anie.198809271Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische Aktivität. Wiley Angewandte Chemie vol. 100, (7) 972-973. 10.1002/ange.19881000720Humphreys CJ, Eaglesham DJ, Maher DM and Fraser HL (1988). CBED and CBIM from semiconductors and superconductors. Elsevier Ultramicroscopy vol. 26, (1-2) 13-23. 10.1016/0304-3991(88)90371-3Huxford NP, Eaglesham DJ and Humphreys CJ (1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors. Springer Nature Nature vol. 331, (6153) 286-286. 10.1038/331286b0Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1988). Dislocation Nucleation in GeSi/Si(100) Strained Epilayers. Springer Nature Mrs Advances vol. 138, 10.1557/proc-138-3971987
Huxford NP, Eaglesham DJ and Humphreys CJ (1987). Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors. Springer Nature Nature vol. 329, (6142) 812-813. 10.1038/329812a0Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1987). New phases in the superconducting Y:Ba:Cu:O system. Aip Publishing Applied Physics Letters vol. 51, (6) 457-459. 10.1063/1.98421Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NM and Birchall JD (1987). THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-y. Wiley Advanced Ceramic Materials vol. 2, (3B) 662-667. 10.1111/j.1551-2916.1987.tb00132.xWaddington W, Rez P, Grant I and Humphreys C (1987). Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)]. American Physical Society (Aps) Physical Review B vol. 35, (10) 5297-5297. 10.1103/physrevb.35.5297Maher DM, Fraser HL, Humphreys CJ, Knoell RV and Bean JC (1987). Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. Aip Publishing Applied Physics Letters vol. 50, (10) 574-576. 10.1063/1.98139Berger SD, Salisbury IG, Milne RH, Imeson D and Humphreys CJ (1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. Taylor & Francis Philosophical Magazine B vol. 55, (3) 341-358. 10.1080/13642818708208619Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G and Marchionna M (1987). Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5–. Royal Society of Chemistry (Rsc) Chemical Communications (10) 765-766. 10.1039/c39870000765Kvam EP, Eaglesham DJ, Maher DM, Humphreys CJ, Bean JC, Green GS and Tanner BK (1987). The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers. Springer Nature Mrs Advances vol. 104, 10.1557/proc-104-623Humphreys CJ (1987). High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures. Thin Film Growth Techniques For Low-Dimensional Structures Springer Nature 10.1007/978-1-4684-9145-6_251986
Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. Semiconductor Science and Technology vol. 1, (6) 342-345. Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. Iop Publishing Semiconductor Science and Technology vol. 1, (6) 10.1088/0268-1242/1/6/001Waddington WG, Rez P, Grant IP and Humphreys CJ (1986). White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals. American Physical Society (Aps) Physical Review B vol. 34, (3) 1467-1473. 10.1103/physrevb.34.1467Petford AK and Humphreys CJ (1986). Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study. International Union of Crystallography (Iucr) Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials vol. 42, (3) 224-229. 10.1107/s0108768186098300Eaglesham DJ, Hetherington CJD and Humphreys CJ (1986). Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals. Springer Nature Mrs Advances vol. 77, 10.1557/proc-77-4731985
Davies RA, Kelly MJ, Kerr TM, Hetherington CJD and Humphreys CJ (1985). Geometric and electronic structure of a semiconductor superlattice. Springer Nature Nature vol. 317, (6036) 418-419. 10.1038/317418a0Humphreys CJ (1985). Surface physics: Hopping atoms in crystal growth. Springer Nature Nature vol. 317, (6032) 16-16. 10.1038/317016a0Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Structure of the Al/Al2O3 interface. Aip Publishing Applied Physics Letters vol. 46, (9) 830-832. 10.1063/1.95899Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Examination of the Al/Al2O3 interface by high-resolution electron microscopy. Elsevier Ultramicroscopy vol. 18, (1-4) 387-394. 10.1016/0304-3991(85)90157-31984
Salisbury IG, Timsit RS, Berger SD and Humphreys CJ (1984). Nanometer scale electron beam lithography in inorganic materials. Aip Publishing Applied Physics Letters vol. 45, (12) 1289-1291. 10.1063/1.95115Humphreys CJ (1984). MICRO-84: Electron microscopy 50 years on. Springer Nature Nature vol. 311, (5981) 12-12. 10.1038/311012a0Cherns D, Hetherington CJD and Humphreys CJ (1984). The atomic structure of the NiSi2-(001)Si interface. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 49, (1) 165-177. 10.1080/01418618408233436Humphreys CJ (1984). Crytallography: Defects in reduced oxides. Springer Nature Nature vol. 309, (5966) 310-310. 10.1038/309310a0Spence JCH and Humphreys CJ (1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. Optik (Jena) vol. 66, (3) 225-242. Butler JH, Spence JCH, Reese G, Humphreys CJ and Doole RC (1984). The energy dependence of axial coherent bremsstrahlung at low accelerating voltages. Taylor & Francis Radiation Effects and Defects in Solids vol. 84, (3-4) 245-256. 10.1080/003375785082240611983
Hull R, Petford AK, Humphreys CJ and Smith DJ (1983). High resolution electron microscopy of silver β- and β″ -aluminas. Elsevier Solid State Ionics vol. 9, 181-186. 10.1016/0167-2738(83)90231-xHumphreys CJ and Waddington WG (1983). Dating the Crucifixion. Springer Nature Nature vol. 306, (5945) 743-746. 10.1038/306743a0Hull R, Smith DJ and Humphreys CJ (1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. Wiley Journal of Microscopy vol. 130, (2) 203-214. 10.1111/j.1365-2818.1983.tb04218.xMochel ME, Humphreys CJ, Eades JA, Mochel JM and Petford AM (1983). Electron beam writing on a 20-Å scale in metal β-aluminas. Aip Publishing Applied Physics Letters vol. 42, (4) 392-394. 10.1063/1.939181981
Humphreys CJ (1981). Fundamental concepts of stem imaging. Elsevier Ultramicroscopy vol. 7, (1) 7-12. 10.1016/0304-3991(81)90017-6Humphreys CJ and Spence JCH (1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. Optik (Jena) vol. 58, (2) 125-142. 1980
Spencer JP and Humphreys CJ (1980). A multiple scattering transport theory for electron. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 42, (4) 433-451. 10.1080/01418618008239368Sellar JR, Imeson D and Humphreys CJ (1980). The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 36, (4) 686-696. 10.1107/s0567739480001398Sellar JR, Imeson D and Humphreys CJ (1980). The combined convergent beam/critical voltage technique in high voltage electron microscopy. Elsevier Micron (1969) vol. 11, (3-4) 241-242. 10.1016/0047-7206(80)90004-71979
Humphreys CJ (1979). The scattering of fast electrons by crystals. Iop Publishing Reports On Progress in Physics vol. 42, (11) 10.1088/0034-4885/42/11/002Buckley-golder IM and Humphreys CJ (1979). A theoretical study of temperature distributions during Czochralski crystal growth. Taylor & Francis The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics vol. 39, (1) 41-57. 10.1080/014186179082392741977
Humphreys CJ, Drummond RA, Hart-davis A and Butler EP (1977). Additional image peaks in the high resolution imaging of dislocations. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 35, (6) 1543-1555. 10.1080/14786437708232977Rez P, Humphreys CJ and Whelan MJ (1977). The distribution of intensity in electron diffraction patterns due to phonon scattering. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 35, (1) 81-96. 10.1080/147864377082359741974
Sandström R, Spencer JF and Humphreys CJ (1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. Iop Publishing Journal of Physics D vol. 7, (7) 10.1088/0022-3727/7/7/310Humphreys CJ (1974). Recent applications of high voltage electron microscopy in various branches of science. Microscope vol. 22, (2) 129-140. 1973
Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R, Howell PGT, Boyde A, Brandis EK, Johari O and DeNee PB (1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.1972
Spencer JP, Humphreys CJ and Hirsch PB (1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 26, (1) 193-213. 10.1080/14786437208221029Humphreys CJ (1972). The optimum voltage in very high voltage electron microscopy. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 25, (6) 1459-1472. 10.1080/14786437208223865Lally JS, Humphreys CJ, Metherell AJF and Fisher RM (1972). The critical voltage effect in high voltage electron microscopy. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 25, (2) 321-343. 10.1080/147864372082268081971
Humphreys CJ, Thomas LE, Lally JS and Fisher RM (1971). Maximizing the penetration in high voltage electron microscopy. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 23, (181) 87-114. 10.1080/14786437108216366Humphreys CJ and Fisher RM (1971). Bloch wave notation in many‐beam electron diffraction theory. International Union of Crystallography (Iucr) Acta Crystallographica Section a: Foundations and Advances vol. 27, (1) 42-45. 10.1107/s05677394710000811970
Thomas LE and Humphreys CJ (1970). Kikuchi patterns in a high voltage electron microscope. Wiley Physica Status Solidi (a) – Applications and Materials Science vol. 3, (3) 599-615. 10.1002/pssa.19700030306Tanner BK and Humphreys CJ (1970). High resolution divergent-beam X-ray topography. Iop Publishing Journal of Physics D vol. 3, (7) 10.1088/0022-3727/3/7/421Humphreys CJ and Lally JS (1970). Aspects of Bloch-Wave Channeling in High-Voltage Electron Microscopy. Aip Publishing Journal of Applied Physics vol. 41, (1) 232-235. 10.1063/1.1658326Thomas LE, Humphreys CJ, Duff WR and Grubb DT (1970). Radiation damage of polymers in the million volt electron microscope. Taylor & Francis Radiation Effects and Defects in Solids vol. 3, (1) 89-91. 10.1080/003375770082356201969
Humphreys CJ and Whelan MJ (1969). Inelastic scattering of fast electrons by crystals. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 20, (163) 165-172. 10.1080/147864369082285431968
Humphreys CJ and Hirsch PB (1968). Absorption parameters in electron diffraction theory. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 18, (151) 115-122. 10.1080/147864368082273131967
Humphreys CJ, Howie A and Booker GR (1967). Some electron diffraction contrast effects at planar defects in crystals. Taylor & Francis The London Edinburgh and Dublin Philosophical Magazine and Journal of Science vol. 15, (135) 507-522. 10.1080/14786436708220898Grants
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICsKuball M, Humphreys CJ, Thayne IG, Williams OA, Tasker PJ, Oliver RA, Wallis DJ, Ding YL, Elgaid K and May PW
£4,325,358 Engineering and Physical Sciences Research Council (01-01-2017 - 31-12-2021)
Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)Oliver RA and Humphreys CJ
£979,287 Engineering and Physical Sciences Research Council (29-01-2015 - 28-12-2020)
Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)Humphreys CJ
£149,841 Technology Strategy Board (01-01-2019 - 30-06-2020)
Integration of RF Circuits with High Speed GaN Switching on Silicon SubstratesHumphreys CJ and Oliver RA
£434,930 Engineering and Physical Sciences Research Council (30-04-2016 - 29-04-2020)
Silicon Compatible GaN Power ElectronicsThayne I, Chalker PR, Forsyth A, Foxon CT, Houston PA, Humphreys C, Johnson CM, Kuball M, Moran DA, Novikov S, Paul DJ and Wasige E
£6,196,717 Engineering and Physical Sciences Research Council (01-03-2013 - 30-08-2018)
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.Novikov S, Allsopp D, Campion RP, Foxon CT, Humphreys C, Kent A, Oliver RA and Shields PA
£688,437 Engineering and Physical Sciences Research Council (31-07-2013 - 31-01-2017)
Lighting the FutureHumphreys C, Allsopp D, Cheetham AK, Dawson P, Martin RW, Oliver RA and Skabara PJ
£6,361,650 Engineering and Physical Sciences Research Council (01-12-2010 - 30-11-2015)
Study of semi-polar and non-polar nitride based structures for opto-electronic device applicationsOliver RA, Humphreys C and Moram MA
£560,765 Engineering and Physical Sciences Research Council (01-01-2012 - 29-06-2015)
Nitrides for the 21st centuryHumphreys C and Oliver RA
£826,500 Engineering and Physical Sciences Research Council (01-11-2009 - 31-10-2014)
Science Bridge Award USA: Harnessing Materials for EnergyHumphreys C, Cheetham AK, Deshpande V, Friend R and White IH
£1,447,635 Engineering and Physical Sciences Research Council (12-04-2009 - 11-10-2012)
LED Lighting for the 21st CenturyHumphreys C
£219,473 Engineering and Physical Sciences Research Council (30-09-2008 - 28-02-2011)
An Advanced SEM-FIB Dual Beam Microscope for Three-Dimensional Mesoscale Fabrication, Imaging and AnalysisMidgley PA, Best S, Blamire M, Greer AL and Humphreys C
£1,223,819 Engineering and Physical Sciences Research Council (31-08-2007 - 28-02-2011)
Materials Challenges in GaN-based Light Emitting StructuresHumphreys C and Oliver RA
£1,362,142 Engineering and Physical Sciences Research Council (01-11-2006 - 29-09-2010)
Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-MicroHumphreys C
£45,701 Engineering and Physical Sciences Research Council (31-08-2007 - 30-08-2010)
Defect reduction in GaN using the in-situ growth of transition metal nitride layersHumphreys C, Barber Z and Moram MA
£39,669 Engineering and Physical Sciences Research Council (01-01-2008 - 29-06-2008)
A Direct Approach to Crystal Structure Determination - a solution to the phase problemMoodie A, Etheridge J and Humphreys C
AUD281,867 Australian Research Council (01-01-2003 - 01-04-2007)
Optimising GaN light emitting structures on free-standing GaN substratesHumphreys C
£68,881 Engineering and Physical Sciences Research Council (30-06-2006 - 31-10-2006)