Prof Sir Colin Humphreys
Professor of Materials Science
School of Engineering and Materials Science
Queen Mary University of London
+44 (0)20 7882 3450Queen Mary University of London
c.humphreys@qmul.ac.uk
www.sems.qmul.ac.uk/c.humphreys
Publications
Publications of specific relevance to 2024
Weng Z, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko A, Lee LY, Baginska J, Gillin W, Guiney I, Humphreys C and Fenwick O (2024). Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers. 10.1021/acsaelm.4c012082022
Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. vol. 28, (S1) 2736-2737. 10.1017/s1431927622010297Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. vol. 105, (16) 10.1103/PhysRevB.105.165416Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). vol. 10, (3) 2270012-2270012. 10.1002/adom.202270012Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. vol. 105, (2) 10.1103/physrevb.105.024103Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ (2022). The relationship between epitaxial growth, defect microstructure and luminescence in GaN. 10.1201/9781003063056-1112021
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. 2101675-2101675. 10.1002/adom.202101675Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. vol. 23, (35) 6059-6069. 10.1039/d1ce00627dSun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. 10.1063/5.0040578Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. vol. 103, (11) 119901-119901. 10.1103/physrevb.103.119901Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL (2021). Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100). 10.1201/9781003069621-272020
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. vol. 10, 10.1038/s41598-020-72372-1Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. 10.1021/acsnano.9b08553S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. vol. 38, (3) 10.1116/1.5144509Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. vol. 101, 10.1103/PhysRevB.101.1254212019
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. vol. 217, (7) 10.1002/pssa.201900794Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. 10.3390/s19204386Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. vol. 2, (10) 6998-7004. 10.1021/acsaem.8b02132Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? vol. 123, 135501-135501. 10.1103/PhysRevLett.123.135501Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. vol. 125, (22) 10.1063/1.5097411Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. vol. 125, (16) 10.1063/1.5084330Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. vol. 58, 10.7567/1347-4065/ab0407Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. vol. 99, (4) 10.1103/PhysRevB.99.0454022018
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. vol. 66, (1) 613-618. 10.1109/ted.2018.2882533Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. vol. 124, (18) 10.1063/1.5047240Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. vol. 5, (11) 4437-4446. 10.1021/acsphotonics.8b00904Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. vol. 98, (15) 10.1103/physrevb.98.155301Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. vol. 11, (9) 10.3390/ma11091736Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. vol. 124, (10) 10.1063/1.5046801Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. vol. 124, (5) 10.1063/1.5027680Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. vol. 59, (4) Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. vol. 24, (S1) 4-5. 10.1017/s143192761800051xCho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. vol. 54, (15) 947-949. 10.1049/el.2018.1097Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. vol. 123, (18) 10.1063/1.5027822Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. vol. 123, (18) 10.1063/1.5026267Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. vol. 30, (17) 10.1088/1361-648x/aab818Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. vol. 59, (1) Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. vol. 59, (1) 1.8-1.8. 10.1093/astrogeo/aty021Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. vol. 123, (2) 10.1063/1.5006255Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. 10.1201/97813510746362017
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. vol. 122, (23) 10.1063/1.4986434Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. vol. 64, (12) 4868-4874. 10.1109/ted.2017.2757516Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. vol. 58, (5) 5.39-5.42. 10.1093/astrogeo/atx178Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. vol. 44, (18) 9276-9282. 10.1002/2017GL074677Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. vol. 50, (43) 10.1088/1361-6463/aa865eRouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. vol. 111, (4) 10.1063/1.4996233Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. vol. 17, (8) 4846-4852. 10.1021/acs.nanolett.7b01697Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. vol. 110, (17) 10.1063/1.4982594Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. vol. 32, (11) 8743-8750. 10.1109/tpel.2016.2643499Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. vol. 176, 93-98. 10.1016/j.ultramic.2017.01.019Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. vol. 459, 185-188. 10.1016/j.jcrysgro.2016.12.025Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). vol. 121, (4) 10.1063/1.4973956Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. vol. 17, (2) 474-482. 10.1021/acs.cgd.6b01281Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. vol. 121, (1) 10.1063/1.4973278Smeeton T and Humphreys C (2017). Perspectives on Electronic and Photonic Materials. 10.1007/978-3-319-48933-9_12016
Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Impact of high energy electrons on nitrides for nanocathodoluminescence. 10.1002/9783527808465.emc2016.6172Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping. 10.1002/9783527808465.emc2016.6170Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. vol. 109, (23) 10.1063/1.4971366Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. vol. 456, 151-154. 10.1016/j.jcrysgro.2016.07.038Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. vol. 247, 68-71. 10.1016/j.ssc.2016.08.017Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. vol. 109, (22) 10.1063/1.4968591Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. vol. 17, (1) 736-743. 10.1080/14686996.2016.1244474Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. vol. 120, (16) 10.1063/1.4965989Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. vol. 120, (8) 10.1063/1.4961417Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. vol. 6, (1) 10.1038/srep29747Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). vol. 31, (8) 10.1088/0268-1242/31/8/085007Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. vol. 6, (7) 10.1063/1.4959100Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. vol. 108, (25) 10.1063/1.4954236Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. 10.1117/2.1201605.006482Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. vol. 108, (21) 10.1063/1.4948582Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. vol. 119, (18) 10.1063/1.4948237Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. vol. 31, (6) 10.1088/0268-1242/31/6/065020Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. vol. 119, (17) 10.1063/1.4948299Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). vol. 253, (5) 1024-1024. 10.1002/pssb.201670532Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. vol. 6, (1) 10.1038/srep24862Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. 10.1002/pssc.201610187Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. vol. 440, 69-75. 10.1016/j.jcrysgro.2016.01.014Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. vol. 63, (5) 1861-1865. 10.1109/ted.2016.2542588Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. vol. 16, (4) 1907-1916. 10.1021/acs.cgd.5b01438Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. vol. 119, (10) 10.1063/1.4942847Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. vol. 108, (7) 10.1063/1.4942093Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. vol. 119, (5) 10.1063/1.4941321Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). vol. 434, 123-127. 10.1016/j.jcrysgro.2015.11.005Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. vol. 4, (35) 8291-8296. 10.1039/c6tc02825jZhu D and Humphreys CJ (2016). Solid-State Lighting Based on Light Emitting Diode Technology. 10.1007/978-3-319-31903-2_52015
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Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. vol. 100, (11) 10.1063/1.2369652Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. vol. 89, (21) 10.1063/1.2392820Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. vol. 107, (4-5) 382-389. 10.1016/j.ultramic.2006.10.002Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. vol. 86, (29-31) 4781-4796. 10.1080/14786430600776322Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. vol. 252, (24) 8385-8387. 10.1016/j.apsusc.2005.11.069Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. vol. 100, (5) 10.1063/1.2335980Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. vol. 107, (2-3) 140-150. 10.1016/j.ultramic.2006.06.003Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. vol. 100, (2) 10.1063/1.2217106Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. vol. 89, (1) 10.1063/1.2219747Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. vol. 86, (16) 2315-2327. 10.1080/14786430500522628Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. vol. 88, (21) 10.1063/1.2207552Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. vol. 203, (7) 1819-1823. 10.1002/pssa.200565250Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. vol. 32, (1-2) 119-122. 10.1016/j.physe.2005.12.022Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. vol. 289, (2) 506-514. 10.1016/j.jcrysgro.2005.12.075Smeeton T and Humphreys C (2006). Perspectives on Electronic and Optoelectronic Materials. 10.1007/978-0-387-29185-7_1Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. vol. 955, 10.1557/proc-0955-i04-072005
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. vol. 892, (1) 10.1557/proc-0892-ff32-03Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. vol. 892, (1) 10.1557/proc-0892-ff28-07Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. vol. 892, (1) 10.1557/proc-0892-ff27-12Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. vol. 98, (5) 10.1063/1.2033144Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. vol. 86, (21) 10.1063/1.1935044Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. vol. 97, (10) 10.1063/1.1897070Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. vol. 53, (1) 97-110. 10.1016/j.actamat.2004.09.007Costa P, Datta R, Kappers M, Vickers M and Humphreys C (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. vol. 892, (1) 10.1557/proc-0892-ff25-01Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. vol. 892, (1) 10.1557/proc-0892-ff24-06Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. vol. 892, (1) 10.1557/proc-0892-ff11-022004
Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. vol. 97, (1) 10.1063/1.1823581Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. vol. 85, (22) 5200-5202. 10.1063/1.1829139Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. vol. 85, (16) 3411-3413. 10.1063/1.1807962Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. vol. 3, (3) 343-347. 10.1109/tnano.2004.828567Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. vol. 84, (20) 4110-4112. 10.1063/1.1753653Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? vol. 29, (4) 222-223. 10.1557/mrs2004.65Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. vol. 20, (4) 533-538. 10.1179/026708304225012008Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. vol. 84, (12) 2109-2111. 10.1063/1.1689755Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. vol. 4, (3) 225-229. 10.1039/b312592kChen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering. vol. 7, (8) a235-a238. 10.1149/1.1758931Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. vol. 831, 10.1557/proc-831-e8.8Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). vol. 831, (1) 377-381. 10.1557/proc-831-e3.172003
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. vol. 83, (26) 5419-5421. 10.1063/1.1636534Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. vol. 83, (17) 3626-3627. 10.1063/1.1622987Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. vol. 83, (13) 2674-2676. 10.1063/1.1614831Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. vol. 256, (3-4) 237-242. 10.1016/s0022-0248(03)01359-9Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. vol. 94, (3) 1565-1574. 10.1063/1.1587251Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. vol. 83, (4) 755-757. 10.1063/1.1595716Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. vol. 83, (2) 293-295. 10.1063/1.1592302Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. vol. 93, (11) 9095-9103. 10.1063/1.1571220Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. vol. 82, (17) 2755-2757. 10.1063/1.15705152002
Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. vol. 92, (12) 7667-7671. 10.1063/1.1525862Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]. vol. 81, (16) 3102-3103. 10.1063/1.1515887Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. vol. 66, (12) 10.1103/physrevb.66.125319Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope—A study of Si. vol. 91, (11) 9116-9122. 10.1063/1.1476968Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. vol. 20, (3) 986-990. 10.1116/1.1464842Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. vol. 91, (1) 367-374. 10.1063/1.1419210Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. vol. 10, (1) 11-11. Humphreys CJ (2002). Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction. 10.1016/b978-012613760-6/50069-32001
Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy. vol. 50, (6) 489-495. 10.1093/jmicro/50.6.489Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. vol. 81, (11) 1725-1744. 10.1080/13642810110079962Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. vol. 79, (16) 2594-2596. 10.1063/1.1410362Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. vol. 231, (4) 466-473. 10.1016/s0022-0248(01)01522-6Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. vol. 230, (3-4) 573-578. 10.1016/s0022-0248(01)01303-3Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. vol. 230, (3-4) 438-441. 10.1016/s0022-0248(01)01252-0Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN–sapphire interface. vol. 79, (8) 1121-1123. 10.1063/1.1395525Keast VJ, Sharma N, Kappers M and Humphreys CJ (2001). Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells. vol. 7, (S2) 1182-1183. 10.1017/s1431927600031986Ofori AP and Humphreys CJ (2001). Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis). vol. 7, (S2) 346-347. 10.1017/s143192760002780xThomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. vol. 90, (2) 947-952. 10.1063/1.1379780Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. vol. 63, (20) 10.1103/physrevb.63.205117Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. vol. 81, (1-3) 19-22. 10.1016/s0921-5107(00)00677-2Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. vol. 89, (6) 3143-3150. 10.1063/1.1347003Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. vol. 30, (3) l13-l16. 10.1007/s11664-001-0030-2Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. vol. 381, (2) 231-235. 10.1016/s0040-6090(00)01749-1Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. vol. 667, 10.1557/proc-667-g6.72000
Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. vol. 18, (6) 2737-2744. 10.1116/1.1323970Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure. vol. 8, (9-11) 1209-1214. 10.1016/s0966-9795(00)00043-1Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. vol. 77, (9) 1274-1276. 10.1063/1.1289904Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy. vol. 8, (8) 903-913. 10.1016/s0966-9795(00)00029-7Pankhurst DA, Botton GA and Humphreys CJ (2000). The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl. vol. 6, (S2) 186-187. 10.1017/s1431927600033420Humphreys C (2000). Facing up to the future of materials science and technology. vol. 8, (4) 11-13. Humphreys C (2000). Oxbridge and the public schools. vol. 8, (1) 2-3. Humphreys C (2000). THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL. vol. 50, (3) 323-328. 10.1163/1568533005063961999
Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. vol. 86, (5) 2499-2504. 10.1063/1.371083Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. vol. 14, (8) 3226-3236. 10.1557/jmr.1999.0436Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). vol. 204, (4) 419-428. 10.1016/s0022-0248(99)00217-1Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. vol. 14, (5) 2036-2042. 10.1557/jmr.1999.0275LIU , PRESTON , BOOTHROYD and HUMPHREYS (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images. vol. 194, (1) 171-182. 10.1046/j.1365-2818.1999.00458.xLIU , BOOTHROYD and HUMPHREYS (1999). Energy‐filtered transmission electron microscopy of multilayers in semiconductors. vol. 194, (1) 58-70. 10.1046/j.1365-2818.1999.00459.xHumphreys CJ (1999). A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity. vol. 55, (2‐1) 228-233. 10.1107/s0108767398014093Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-TWalther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy. vol. 197, (1-2) 113-128. 10.1016/s0022-0248(98)00930-0Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ (1999). Structure and Climb of Faulted Dipoles in GaAs. vol. 171, (1) 53-57. 10.1002/(sici)1521-396x(199901)171:1<53::aid-pssa53>3.0.co;2-iSmith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon. vol. 146, (1) 306-312. 10.1149/1.1391605Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. vol. 85, (1) 148-152. 10.1063/1.3694611998
Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs. vol. 81, (24) 5350-5353. 10.1103/physrevlett.81.5350Humphreys C (1998). Stuff of dreams. vol. 157, (2126) 44-45. Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux. vol. 37, (12R) 10.1143/jjap.37.6556Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (YYonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. vol. 253, (1-2) 148-150. 10.1016/s0921-5093(98)00723-0Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. vol. 78, (2) 491-506. 10.1080/01418619808241915Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys. vol. 78, (2) 97-103. 10.1080/095008398178075Humphreys C (1998). Shaping the future of materials science. vol. 6, (6) 352-355. Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. vol. 83, (10) 5504-5508. 10.1063/1.367410Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. vol. 57, (3) 1505-1509. 10.1103/physrevb.57.1505Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1998). Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory. vol. 552, 10.1557/proc-552-kk10.1.1Pekarskaya E, Humphreys CJ and Jones CN (1998). Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions. vol. 552, 10.1557/proc-552-kk5.18.1Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of YMatsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. vol. 37, (12A) 6556-6561. 10.1143/JJAP.37.6556Humphreys C (1998). The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI. vol. 48, (2) 196-213. 10.1163/15685339827215501997
Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. vol. 15, (6) 1954-1960. 10.1116/1.589584Humphreys C (1997). Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0. vol. 5, (4) 443-445. 10.1002/(sici)1234-981x(199710)5:4<443::aid-euro204>3.0.co;2-1Walther T, Humphreys CJ and Cullis AG (1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. vol. 71, (6) 809-811. 10.1063/1.119653Botton GA and Humphreys CJ (1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. vol. 28, (4) 313-319. 10.1016/s0968-4328(97)00018-8Xin Y, Wallis D, Browning N, Sivananthan S, Pennycook S and Humphreys C (1997). Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM. vol. 3, (S2) 461-462. 10.1017/s1431927600009193Liu C, Dunin-Borkowski R, Boothroyd C, Brown P and Humphreys C (1997). Characterization of Ultrathin Doping Layers in Semiconductors. vol. 3, (4) 352-363. 10.1017/s1431927697970276Botton GA, Burnell G, Humphreys CJ, Yadav T and Withers JC (1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. vol. 58, (7) 1091-1102. 10.1016/s0022-3697(97)00233-3Wiezorek JMK, Humphreys CJ and Fraser HL (1997). Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al. vol. 75, (5) 281-290. 10.1080/095008397179534Xin Y, Brown PD, Humphreys CJ, Cheng TS and Foxon CT (1997). Domain boundaries in epitaxial wurtzite GaN. vol. 70, (10) 1308-1310. 10.1063/1.118520Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS and Foxon CT (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. vol. 171, (3-4) 321-332. 10.1016/s0022-0248(96)00663-x1996
Brown PD and Humphreys CJ (1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructure. vol. 80, (4) 2527-2529. 10.1063/1.363038Harrowell RV (1996). Missed opportunities for high-temperature superconductivity. vol. 9, (8) 15-15. 10.1088/2058-7058/9/8/14Botton GA, Guo GY, Temmerman WM and Humphreys CJ (1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. vol. 54, (3) 1682-1691. 10.1103/physrevb.54.1682Chen GS, Boothroyd CB and Humphreys CJ (1996). Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists. vol. 69, (2) 170-172. 10.1063/1.117361Moodie AF, Etheridge J and Humphreys CJ (1996). The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric Crystals. vol. 52, (4) 596-605. 10.1107/s0108767396001171Inkson BJ and Humphreys CJ (1996). High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl. vol. 73, (6) 1647-1661. 10.1080/01418619608243004Inkson BJ and Humphreys CJ (1996). Dislocations at 120° order interfaces in TiAl. vol. 73, (5) 1333-1345. 10.1080/01418619608245136Loginov YY, Brown PD and Humphreys CJ (1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. vol. 38, (4) 692-697. Loginov YY, Brown PD and Humphreys CJ (1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. vol. 38, (2) 272-277. Chen Q, Knowles KM, Humphreys CJ and Wu XF (1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. vol. 31, (16) 4227-4231. 10.1007/bf00356443Loginov YY, Brown PD and Humphreys CJ (1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. vol. 32, (1) 22-25. Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ, Andranov AV, Lacklison DE, Orton JW and Halliwell M (1996). Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method. vol. 1, (1) 10.1557/s10925783000020401995
Wiezorek JMK, Court SA and Humphreys CJ (1995). On the dissociation of prism plane superdislocations in Ti3Al. vol. 72, (6) 393-403. 10.1080/09500839508242479Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T, Fujiyasu H and Nakanishi Y (1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. vol. 156, (3) 155-162. 10.1016/0022-0248(95)00276-6Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1995). A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy. 10.4028/www.scientific.net/msf.196-201.505Walther T, Humphreys CJ, Grimshaw MP and Churchill AC (1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. vol. 72, (4) 1015-1030. 10.1080/01418619508239950Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR and Humphreys CJ (1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. vol. 60, (2) 311-323. 10.1016/0304-3991(95)00058-1Wiezorek JMK and Humphreys CJ (1995). On the hierarchy of planar fault energies in TiAl. vol. 33, (3) 451-458. 10.1016/0956-716x(95)00212-eBrown PD, Loginov YY, Stobbs WM and Humphreys CJ (1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. vol. 72, (1) 39-57. 10.1080/01418619508239581Xin Y, Zhou W and Humphreys CJ (1995). HREM studies of the (001) surface of YBa2Cu4O8. vol. 249, (3-4) 319-332. 10.1016/0921-4534(95)00327-4Inkson BJ and Humphreys CJ (1995). High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAl. vol. 71, (6) 307-312. 10.1080/09500839508241012Inkson BJ, Boothroyd CB and Humphreys CJ (1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. vol. 43, (4) 1429-1438. 10.1016/0956-7151(94)00345-iBrown PD and Humphreys CJ (1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. vol. 11, (1) 54-65. 10.1179/mst.1995.11.1.54CAMPBELL J and HUMPHREYS C (1995). A FRAMEWORK FOR THE FUTURE. vol. 3, (6) 286-287. 1994
WHITE RS and HUMPHREYS CJ (1994). Famines and cataclysmic volcanism. vol. 10, (5) 181-185. 10.1111/j.1365-2451.1994.tb00421.xBurgess WG, Preston AR, Botton GA, Zaluzec NJ and Humphreys CJ (1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. vol. 55, (3) 276-283. 10.1016/0304-3991(94)90062-0Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW and Humphreys CJ (1994). Transmission electron microscopy investigations of II–VI/GaAs heterostructures. vol. 138, (1-4) 538-544. 10.1016/0022-0248(94)90865-6Wiezorek JMK, Preston AR, Court SA, Fraser HL and Humphreys CJ (1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. vol. 69, (2) 285-299. 10.1080/014186194082443441993
Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium. vol. 41, (10) 2867-2876. 10.1016/0956-7151(93)90101-wChen GS, Boothroyd CB and Humphreys CJ (1993). Novel fabrication method for nanometer-scale silicon dots and wires. vol. 62, (16) 1949-1951. 10.1063/1.1095001992
Humphreys CJ and Waddington WG (1992). The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion. vol. 43, (2) 10.53751/001c.30487MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S and HUMPHREYS C (1992). ULTIMATE LIMITS OF LITHOGRAPHY. vol. 5, (11) 28-32. 1991
Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP and Salisbury IG (1991). The origin of dislocations in multilayers. vol. 1, (6) 1119-1130. 10.1051/jp3:1991175HUMPHREYS CJ (1991). THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST. vol. 32, (4) 389-407. Humphreys C (1991). 100 keV electron beam damage of metals and oxides. vol. 22, (1-2) 147-148. 10.1016/0739-6260(91)90133-k1990
Kvam EP, Maher DM and Humphreys CJ (1990). Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si. vol. 5, (9) 1900-1907. 10.1557/jmr.1990.1900Humphreys CJ, Bullough TJ, Devenish RW, Maher DM and Turner PS (1990). The interaction of electron beams with solids - Some new effects. vol. 48, (4) 788-789. 10.1017/s0424820100177076Turner PS, Bullough TJ, Devenish RW, Maher DM and Humphreys CJ (1990). Nanometre hole formation in MgO using electron beams. vol. 61, (4) 181-193. 10.1080/09500839008202357Zhang JG, McCartney DG and Humphreys CJ (1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors. vol. 3, (4) 10.1088/0953-2048/3/4/0061989
Humphreys CJ (1989). Book Review: Transmission Electron Microscopy. By L. Reimer. vol. 28, (12) 1763-1764. 10.1002/anie.198917631Humphreys CJ (1989). Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0. vol. 101, (12) 1803-1804. 10.1002/ange.19891011265Humphreys C (1989). Materials Science and Engineering in Britain. vol. 28, (8) 1077-1078. 10.1002/anie.198910771Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. vol. 59, (5) 1059-1073. 10.1080/01418618908209837Devenish RW, Eaglesham DJ, Maher DM and Humphreys CJ (1989). Nanolithography using field emission and conventional thermionic electron sources. vol. 28, (1-4) 324-329. 10.1016/0304-3991(89)90318-5Fraser HL, Maher DM, Knoell RV, Eaglesham DJ, Humphreys CJ and Bean JC (1989). Compositional modulations in Ge x Si1− x heteroepitaxial layers. vol. 7, (2) 210-213. 10.1116/1.584718Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ and Bean JC (1989). Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layers. vol. 54, (3) 222-224. 10.1063/1.101015Eaglesham DJ, Maher DM, Kvam EP, Bean JC and Humphreys CJ (1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. vol. 62, (2) 187-190. 10.1103/physrevlett.62.187Humphreys C (1989). Materials science and engineering in Britain. vol. 1, (8‐9) 249-250. 10.1002/adma.19890010802Kvam EP, Maher DM and Humphreys CJ (1989). Dislocation Behaviour in GexSi1-x Epilayers on (001)Si. vol. 160, 10.1557/proc-160-71Bullough TJ, Humphreys CJ and Devenish RW (1989). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgO. vol. 157, 10.1557/proc-157-323Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL and Salisbury I (1989). Strains and Misfit Dislocations at Interfaces. 10.1007/978-1-4613-0527-9_151988
Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1988). High temperature superconducting ceramics. vol. 1, (3-4) 229-235. 10.1016/0921-5107(88)90003-7Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK and Bean JC (1988). X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100). vol. 53, (21) 2083-2085. 10.1063/1.100288Humphreys CJ, Maher DM, Fraser HL and Eaglesham DJ (1988). Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals. vol. 58, (5) 787-798. 10.1080/01418618808209953BRAUNSTEIN P, DEVENISH R, GALLEZOT P, HEATON BT, HUMPHREYS CJ, KERVENNAL J, MULLEY S and RIES M (1988). ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity. vol. 19, (42) no-no. 10.1002/chin.198842090Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ and Godfrey DJ (1988). Plasma Anodisation of Silicon for Advanced VLSI. vol. 49, (C4) 10.1051/jphyscol:1988482Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. vol. 27, (7) 927-929. 10.1002/anie.198809271Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische Aktivität. vol. 100, (7) 972-973. 10.1002/ange.19881000720Humphreys CJ, Eaglesham DJ, Maher DM and Fraser HL (1988). CBED and CBIM from semiconductors and superconductors. vol. 26, (1-2) 13-23. 10.1016/0304-3991(88)90371-3Huxford NP, Eaglesham DJ and Humphreys CJ (1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors. vol. 331, (6153) 286-286. 10.1038/331286b0Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1988). Dislocation Nucleation in GeSi/Si(100) Strained Epilayers. vol. 138, 10.1557/proc-138-3971987
Huxford NP, Eaglesham DJ and Humphreys CJ (1987). Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors. vol. 329, (6142) 812-813. 10.1038/329812a0Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1987). New phases in the superconducting Y:Ba:Cu:O system. vol. 51, (6) 457-459. 10.1063/1.98421Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NM and Birchall JD (1987). THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-y. vol. 2, (3B) 662-667. 10.1111/j.1551-2916.1987.tb00132.xWaddington W, Rez P, Grant I and Humphreys C (1987). Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)]. vol. 35, (10) 5297-5297. 10.1103/physrevb.35.5297Maher DM, Fraser HL, Humphreys CJ, Knoell RV and Bean JC (1987). Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. vol. 50, (10) 574-576. 10.1063/1.98139Berger SD, Salisbury IG, Milne RH, Imeson D and Humphreys CJ (1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. vol. 55, (3) 341-358. 10.1080/13642818708208619Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G and Marchionna M (1987). Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5–. (10) 765-766. 10.1039/c39870000765Kvam EP, Eaglesham DJ, Maher DM, Humphreys CJ, Bean JC, Green GS and Tanner BK (1987). The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers. vol. 104, 10.1557/proc-104-623Humphreys CJ (1987). High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures. 10.1007/978-1-4684-9145-6_251986
Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. vol. 1, (6) 342-345. Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. vol. 1, (6) 10.1088/0268-1242/1/6/001Waddington WG, Rez P, Grant IP and Humphreys CJ (1986). White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals. vol. 34, (3) 1467-1473. 10.1103/physrevb.34.1467Petford AK and Humphreys CJ (1986). Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study. vol. 42, (3) 224-229. 10.1107/s0108768186098300Eaglesham DJ, Hetherington CJD and Humphreys CJ (1986). Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals. vol. 77, 10.1557/proc-77-4731985
Davies RA, Kelly MJ, Kerr TM, Hetherington CJD and Humphreys CJ (1985). Geometric and electronic structure of a semiconductor superlattice. vol. 317, (6036) 418-419. 10.1038/317418a0Humphreys CJ (1985). Surface physics: Hopping atoms in crystal growth. vol. 317, (6032) 16-16. 10.1038/317016a0Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Structure of the Al/Al2O3 interface. vol. 46, (9) 830-832. 10.1063/1.95899Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Examination of the Al/Al2O3 interface by high-resolution electron microscopy. vol. 18, (1-4) 387-394. 10.1016/0304-3991(85)90157-31984
Salisbury IG, Timsit RS, Berger SD and Humphreys CJ (1984). Nanometer scale electron beam lithography in inorganic materials. vol. 45, (12) 1289-1291. 10.1063/1.95115Humphreys CJ (1984). MICRO-84: Electron microscopy 50 years on. vol. 311, (5981) 12-12. 10.1038/311012a0Cherns D, Hetherington CJD and Humphreys CJ (1984). The atomic structure of the NiSi2-(001)Si interface. vol. 49, (1) 165-177. 10.1080/01418618408233436Humphreys CJ (1984). Crytallography: Defects in reduced oxides. vol. 309, (5966) 310-310. 10.1038/309310a0Spence JCH and Humphreys CJ (1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. vol. 66, (3) 225-242. Butler JH, Spence JCH, Reese G, Humphreys CJ and Doole RC (1984). The energy dependence of axial coherent bremsstrahlung at low accelerating voltages. vol. 84, (3-4) 245-256. 10.1080/003375785082240611983
Hull R, Petford AK, Humphreys CJ and Smith DJ (1983). High resolution electron microscopy of silver β- and β″ -aluminas. vol. 9, 181-186. 10.1016/0167-2738(83)90231-xHumphreys CJ and Waddington WG (1983). Dating the Crucifixion. vol. 306, (5945) 743-746. 10.1038/306743a0Hull R, Smith DJ and Humphreys CJ (1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. vol. 130, (2) 203-214. 10.1111/j.1365-2818.1983.tb04218.xMochel ME, Humphreys CJ, Eades JA, Mochel JM and Petford AM (1983). Electron beam writing on a 20-Å scale in metal β-aluminas. vol. 42, (4) 392-394. 10.1063/1.939181981
Humphreys CJ (1981). Fundamental concepts of stem imaging. vol. 7, (1) 7-12. 10.1016/0304-3991(81)90017-6Humphreys CJ and Spence JCH (1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. vol. 58, (2) 125-142. 1980
Spencer JP and Humphreys CJ (1980). A multiple scattering transport theory for electron. vol. 42, (4) 433-451. 10.1080/01418618008239368Sellar JR, Imeson D and Humphreys CJ (1980). The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction. vol. 36, (4) 686-696. 10.1107/s0567739480001398Sellar JR, Imeson D and Humphreys CJ (1980). The combined convergent beam/critical voltage technique in high voltage electron microscopy. vol. 11, (3-4) 241-242. 10.1016/0047-7206(80)90004-71979
Humphreys CJ (1979). The scattering of fast electrons by crystals. vol. 42, (11) 10.1088/0034-4885/42/11/002Buckley-golder IM and Humphreys CJ (1979). A theoretical study of temperature distributions during Czochralski crystal growth. vol. 39, (1) 41-57. 10.1080/014186179082392741977
Humphreys CJ, Drummond RA, Hart-davis A and Butler EP (1977). Additional image peaks in the high resolution imaging of dislocations. vol. 35, (6) 1543-1555. 10.1080/14786437708232977Rez P, Humphreys CJ and Whelan MJ (1977). The distribution of intensity in electron diffraction patterns due to phonon scattering. vol. 35, (1) 81-96. 10.1080/147864377082359741974
Sandström R, Spencer JF and Humphreys CJ (1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. vol. 7, (7) 10.1088/0022-3727/7/7/310Humphreys CJ (1974). Recent applications of high voltage electron microscopy in various branches of science. vol. 22, (2) 129-140. 1973
Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R, Howell PGT, Boyde A, Brandis EK, Johari O and DeNee PB (1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.1972
Spencer JP, Humphreys CJ and Hirsch PB (1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. vol. 26, (1) 193-213. 10.1080/14786437208221029Humphreys CJ (1972). The optimum voltage in very high voltage electron microscopy. vol. 25, (6) 1459-1472. 10.1080/14786437208223865Lally JS, Humphreys CJ, Metherell AJF and Fisher RM (1972). The critical voltage effect in high voltage electron microscopy. vol. 25, (2) 321-343. 10.1080/147864372082268081971
Humphreys CJ, Thomas LE, Lally JS and Fisher RM (1971). Maximizing the penetration in high voltage electron microscopy. vol. 23, (181) 87-114. 10.1080/14786437108216366Humphreys CJ and Fisher RM (1971). Bloch wave notation in many‐beam electron diffraction theory. vol. 27, (1) 42-45. 10.1107/s05677394710000811970
Thomas LE and Humphreys CJ (1970). Kikuchi patterns in a high voltage electron microscope. vol. 3, (3) 599-615. 10.1002/pssa.19700030306Tanner BK and Humphreys CJ (1970). High resolution divergent-beam X-ray topography. vol. 3, (7) 10.1088/0022-3727/3/7/421Humphreys CJ and Lally JS (1970). Aspects of Bloch-Wave Channeling in High-Voltage Electron Microscopy. vol. 41, (1) 232-235. 10.1063/1.1658326Thomas LE, Humphreys CJ, Duff WR and Grubb DT (1970). Radiation damage of polymers in the million volt electron microscope. vol. 3, (1) 89-91. 10.1080/003375770082356201969
Humphreys CJ and Whelan MJ (1969). Inelastic scattering of fast electrons by crystals. vol. 20, (163) 165-172. 10.1080/147864369082285431968
Humphreys CJ and Hirsch PB (1968). Absorption parameters in electron diffraction theory. vol. 18, (151) 115-122. 10.1080/147864368082273131967
Humphreys CJ, Howie A and Booker GR (1967). Some electron diffraction contrast effects at planar defects in crystals. vol. 15, (135) 507-522. 10.1080/14786436708220898Grants
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICsKuball M, Humphreys CJ, Thayne IG, Williams OA, Tasker PJ, Oliver RA, Wallis DJ, Ding YL, Elgaid K and May PW
£4,325,358 Engineering and Physical Sciences Research Council (01-01-2017 - 31-12-2021)
Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)Oliver RA and Humphreys CJ
£979,287 Engineering and Physical Sciences Research Council (29-01-2015 - 28-12-2020)
Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devices (GRAPHIC)Humphreys CJ
£149,841 Technology Strategy Board (01-01-2019 - 30-06-2020)
Integration of RF Circuits with High Speed GaN Switching on Silicon SubstratesHumphreys CJ and Oliver RA
£434,930 Engineering and Physical Sciences Research Council (30-04-2016 - 29-04-2020)
Silicon Compatible GaN Power ElectronicsThayne I, Chalker P, Forsyth A, Foxon C, Houston PA, Humphreys C, Johnson C, Kuball M, Moran D, Novikov S, Paul D and Wasige E
£6,196,717 Engineering and Physical Sciences Research Council (01-03-2013 - 30-08-2018)
Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.Novikov S, Allsopp D, Campion R, Foxon C, Humphreys C, Kent A, Oliver R and Shields P
£688,437 Engineering and Physical Sciences Research Council (31-07-2013 - 31-01-2017)
Lighting the FutureHumphreys C, Allsopp D, Cheetham A, Dawson P, Martin R, Oliver R and Skabara P
£6,361,650 Engineering and Physical Sciences Research Council (01-12-2010 - 30-11-2015)
Study of semi-polar and non-polar nitride based structures for opto-electronic device applicationsOliver R, Humphreys C and Moram M
£560,765 Engineering and Physical Sciences Research Council (01-01-2012 - 29-06-2015)
Nitrides for the 21st centuryHumphreys C and Oliver R
£826,500 Engineering and Physical Sciences Research Council (01-11-2009 - 31-10-2014)
Science Bridge Award USA: Harnessing Materials for EnergyHumphreys C, Cheetham A, Deshpande V, Friend R and White IH
£1,447,635 Engineering and Physical Sciences Research Council (12-04-2009 - 11-10-2012)
LED Lighting for the 21st CenturyHumphreys C
£219,473 Engineering and Physical Sciences Research Council (30-09-2008 - 28-02-2011)
An Advanced SEM-FIB Dual Beam Microscope for Three-Dimensional Mesoscale Fabrication, Imaging and AnalysisMidgley P, Best S, Blamire M, Greer A and Humphreys C
£1,223,819 Engineering and Physical Sciences Research Council (31-08-2007 - 28-02-2011)
Materials Challenges in GaN-based Light Emitting StructuresHumphreys C and Oliver R
£1,362,142 Engineering and Physical Sciences Research Council (01-11-2006 - 29-09-2010)
Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-MicroHumphreys C
£45,701 Engineering and Physical Sciences Research Council (31-08-2007 - 30-08-2010)
Defect reduction in GaN using the in-situ growth of transition metal nitride layersHumphreys C, Barber Z and Moram M
£39,669 Engineering and Physical Sciences Research Council (01-01-2008 - 29-06-2008)
A Direct Approach to Crystal Structure Determination - a solution to the phase problemEtheridge J, Moodie A and Humphreys C
AUD281,867 Australian Research Council (01-01-2003 - 01-04-2007)
Optimising GaN light emitting structures on free-standing GaN substratesHumphreys C
£68,881 Engineering and Physical Sciences Research Council (30-06-2006 - 31-10-2006)